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Nano-wire in-situ stretching device in scanning electron microscope and method therefor

An in-situ stretching and stretching device technology, applied in the direction of applying stable tension/pressure to test the strength of materials, can solve problems such as difficult application, complicated control and operating system, unfavorable popularization and promotion, and achieve controllable strain rate. , the effect of convenient control and simple structure

Inactive Publication Date: 2010-02-17
BEIJING UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method integrates several precision devices to work at the same time, the control and operating system are complicated, and high experimental technology is required to obtain reliable experimental data, which is not conducive to popularization.
At the same time, due to the thinner tip of the AFM, it is difficult to fix the nanowires on the tip. This method is difficult to apply to thicker nanowires or stronger nanowires.

Method used

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  • Nano-wire in-situ stretching device in scanning electron microscope and method therefor
  • Nano-wire in-situ stretching device in scanning electron microscope and method therefor
  • Nano-wire in-situ stretching device in scanning electron microscope and method therefor

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Embodiment Construction

[0023] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0024] The nanowire in-situ stretching device in the scanning electron microscope is designed according to the FEI Quanta 200 environmental scanning electron microscope and the JEOL JSM 6500F field emission scanning electron microscope. The length, width and height of the device are 30mm×20mm×10mm, and can be easily installed in In the sample room of the scanning electron microscope, the grade selected for the bimetal is 5J20110, with a specific bending ratio of 20.8 / 10 -6 ·℃ -1 , The linear heating range of the heater is 0-350°C, the control accuracy is 0.1°C, the adjustment distance between the two sample stages is kept ≤2μm at room temperature, the maximum linear displacement range is 5mm, and the displacement accuracy is 0.2μm. Put the prepared SiC nanowires in acetone and ultrasonically disperse them for 60 minutes, randomly disperse the ...

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Abstract

The invention relates to a scanning electron microscope nanometer line original tensile device and method. It controls the heater to make the dual metal plate bending, drive slide of dual metal platemoving linearly along the track to both sides, tensile the nanometer line fastened on the sample bench, recording the tensile acted plastic tensile deformation and fracture failure, matching the dynamic performance of the nanometer line and the microstructure change, revealing the tensile deformation mechanism, fracture failure mode, brittle-ductile transition and so on of one dimension nanometerdynamic performance. It is simple, easy to control, realizing the original position one line measurement of the nanometer line dynamic feature.

Description

Technical field: [0001] The invention relates to a device and method for stretching nanowires in situ in a scanning electron microscope. The scanning electron microscope can be used to observe the structural changes in the stretching deformation process of the nanowires in real time, and reveal the deformation mechanism of the nanowires under tensile load. The brittle-ductile transition mode belongs to the field of in-situ measurement of mechanical properties of nanomaterials. Background technique: [0002] With the development of nanotechnology and the development of nanodevices, nanowires are the basic unit of nanodevices. Nanowires not only have good electrical, magnetic, and optical properties, but also require mechanical loads, force transmission, and motion execution in devices. Wait. The mechanical response mode and failure mode of nanowires under external force, such as brittle fracture or ductile fracture, the maximum fracture strain will definitely affect the reli...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N3/08
Inventor 韩晓东张跃飞张泽
Owner BEIJING UNIV OF TECH
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