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A zinc oxide based blue LED and its manufacture method

A blue-light luminescent, zinc oxide-based technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as the limitation of luminous efficiency, achieve the effects of reducing interface pollution, improving luminous efficiency, and reducing non-radiative recombination centers

Inactive Publication Date: 2007-05-16
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

Currently, ZnO-based light-emitting diodes (LEDs) are available in the form of heterojunctions, such as p-Mg x Zn (1-x) O / ZnO / n-MgxZn (1-x) O, due to the mismatch of the interface, the luminous efficiency of this LED structure is greatly limited by the existence of the non-radiative recombination center despite the restriction of the potential barrier to the carriers.

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  • A zinc oxide based blue LED and its manufacture method

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Embodiment Construction

[0037] See also shown in Fig. 1, the present invention 1, a kind of zinc oxide-based blue light-emitting diode, is characterized in that, comprises:

[0038] A substrate 1, the substrate 1 is circular, and the substrate 1 is glass, silicon wafer, sapphire, zinc oxide or ScAlMgO 4 ;

[0039] A buffer layer 2, the buffer layer 2 is made on the substrate 1, and the buffer layer 2 is conducive to improving the quality of epitaxial growth of materials;

[0040] An n-zinc oxide layer 3, the n-zinc oxide layer 3 is made on the buffer layer 2, and an annular step 31 is etched on the edge of the n-zinc oxide layer 3, and the n-zinc oxide layer 3 is conducive to making a ring Gold / titanium electrode 8;

[0041] An i-zinc oxide active layer 4, the i-zinc oxide active layer 4 is fabricated on the n-zinc oxide layer 3, the main function of the i-zinc oxide active layer 4 is electron-hole recombination;

[0042] A p-zinc oxide layer 5, the p-zinc oxide layer 5 is made on the i-zinc oxide...

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Abstract

The ZnO-base blue diode comprises: from bottom to top, a circular substrate, a buffer layer prepared on substrate to improve material epitaxial grow quality, a n-ZnO layer with edge etched as ring stage for ring Au / Ti electrode, an i-ZnO active layer for hole-electron recombination, a p-ZnO layer to provide being injected holes; an Au / Ni layer benefit to diffusion of injected current, an Au / Ni electrode contacted with wire, and a ring Au / Ti electrode on the said stage.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a zinc oxide-based blue light-emitting diode and a preparation method thereof. Background technique [0002] Zinc oxide has attracted research attention for a long time due to its applications in many scientific and industrial fields such as piezoelectric sensors, optical waveguides, acousto-optic media, conducted gas detection, transparent conductive electrodes, varistors, etc. Now it has received more attention and is considered to be very promising for application in ultraviolet optoelectronics. Compared with GaN material, ZnO material has the following relative advantages: it has ready-made single crystal material; its larger exciton binding energy (~60meV, GaN~25meV). Recent advances in quality and conductivity control of bulk materials and epitaxial films have increased interest in using this material to fabricate short-wavelength light-emitting devices and t...

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Application Information

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IPC IPC(8): H01L33/00H01L33/12
Inventor 张攀峰丛伟光魏鸿源刘祥林
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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