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Method for driving semiconductor device, method and apparatus for driving load, and electronic apparatus

A semiconductor and driving circuit technology, which is applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, radiation control devices, etc., can solve the problems of high frame frequency and low clock frequency, and achieve the effect of reducing crosstalk noise.

Inactive Publication Date: 2007-05-02
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In a high-density CCD, the vertical transfer during the effective pixel period results in a high frame rate and a low clock frequency

Method used

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  • Method for driving semiconductor device, method and apparatus for driving load, and electronic apparatus
  • Method for driving semiconductor device, method and apparatus for driving load, and electronic apparatus
  • Method for driving semiconductor device, method and apparatus for driving load, and electronic apparatus

Examples

Experimental program
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Effect test

no. 1 example

[0172] First Embodiment (Noise Control Technology)

[0173] 6A and 6B and FIGS. 7A and 7B show the noise control method of the first embodiment of the present invention. 6A and 6B are timing charts showing driving timing for driving the CCD solid-state image pickup element 10 of FIG. 1 according to the first embodiment of the present invention. 7A and 7B are timing charts showing driving timings of a comparative example.

[0174] The control method of the first embodiment of the present invention involves four timings of the vertical transfer pulse ΦV supplied to the vertical transfer electrode 12 for vertically driving the vertical transfer register 13 .

[0175] In the CCD solid-state image pickup element 10 , signal charges are received by the photosensor 11 in response to the amount of light and photoelectrically converted, and then stored in the photosensor 11 . The signal charge of the photosensor 11 is then read into the vertical transfer register 13 during the vertic...

no. 2 example

[0245] Second Embodiment (Noise Control Technology)

[0246] FIG. 19 shows a noise control method according to a second embodiment of the present invention. The noise control method of the second embodiment is related to an active control method that actively controls noise caused by crosstalk noise (coupling noise) caused on PWELL-#2b in the CCD solid-state image pickup element and the semiconductor substrate SUB.

[0247] A conventional vertical driver 40 is used as a vertical driver using phase-different vertical transfer pulses ΦV having steep transient characteristics as in the prior art.

[0248] As shown in the sectional view of FIG. 3C , the VSUB terminal 130 on the semiconductor substrate NSUB is supplied with a DC bias voltage Vbias, and the PWELL ground terminal 132 of PWELL-#2b on the output amplifier 16 side is connected to the ground GND. Using these terminals, supply a noise correction signal from outside to cancel coupled noise.

[0249] As shown in FIG. 19 ,...

no. 3 example

[0256] Third Embodiment (Noise Control Technology)

[0257] 20A-20E show the noise control method of the third embodiment of the present invention. The noise control method of the third embodiment involves a noise control circuit such as a low-pass filter provided between the vertical driver and the CCD solid-state image pickup element. The third embodiment is greatly different from the prior art because it is considered important in the prior art that the drive signal from the vertical driver should be transmitted to the vertical transfer electrode in a form as close as possible to its original shape.

[0258] If the vertical transfer pulse ΦV supplied from the vertical driver 40 is supplied to the vertical transfer electrodes through the noise control circuit, even if unexpected spike noise is generated in the output of the vertical driver, crosstalk noise due to the spike noise can be reduced.

[0259] Here, a well-known vertical driver 40 is used as the vertical driver, a...

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PUM

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Abstract

The invention provides a method for driving a semiconductor device, a method and an apparatus for driving a load, and an electronic apparatus. When a signal is read from a CCD solid-state image pickup element, the CCD solid-state image pickup element is driven with at least two driving voltages so that high-speed reading is performed with generation of noise due to interference between the driving voltages reduced. The CCD solid-state image includes a charge storage section between a vertical transfer register and a horizontal transfer register. By performing the transfer of charge in the direction of columns during an effective transfer period of the transfer in the direction of rows, signal charge of one row generated by a light receiving sensor is transferred to the charge storage section, and by performing the transfer outside the effective transfer period in the transfer in the direction of the row, the signal charge of onerow transferred to the charge storage section is transferred to the horizontal transfer register.

Description

technical field [0001] The present invention relates to a method and apparatus for driving a semiconductor device having a capacitive load such as a driving electrode of a two-dimensional matrix charge-coupled device (CCD) solid-state image pickup element, and an electronic device implementing the driving method and apparatus. More specifically, the present invention relates to an image pickup device that realizes a high-speed frame rate during reading of a signal. Furthermore, the present invention relates to a driving method and a driving device for driving a load having capacitive reactance or a load having inductive reactance, and electronic equipment implementing the driving method and device. More particularly, the present invention relates to a mechanism for mitigating variations as well as environmental changes so that a load output signal varies gently when pulsed at a predetermined transient speed. Background technique [0002] Cross References to Related Applicat...

Claims

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Application Information

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IPC IPC(8): H04N3/15H04N5/335H01L27/148H01L21/339H01L29/762H04N5/341H04N5/357H04N5/3722H04N5/376
Inventor 广田功濑上雅博中山宪二
Owner SONY CORP
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