Circuitous transition surface array charge-coupled device
A charge-coupled device and area array technology, applied in the field of area-array charge-coupled device CCD and area-array charge-coupled device, can solve the problem that the time difference of row-column transfer control pulse is not easy to be symmetrical, the resolution and image detection sensitivity are reduced, and the signal electron periodicity problems such as retention, to achieve the effect of simplifying the synchronous drive path, reducing the number of transfers, and improving the detection sensitivity
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[0027] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0028] The area array CCD structure is to oxidize and grow a layer of SiO on the P-type silicon substrate 13 2 insulating layer 10, in SiO 2 The aluminum gate electrode 3 of the MOS photosensitive unit is fabricated by the overlapping gate process on the insulating layer 10, and the aluminum gate electrode 3 of the MOS photosensitive unit is pressurized to form a MOS capacitor potential well 11, and the photogenerated signal electrons 12 are inside the MOS capacitor potential well 11.
[0029] Figure 1 shows an existing three-phase interrow transfer area CCD structure. The aluminum gate electrode 3 of the MOS photosensitive unit forms the photosensitive area, and the transfer gate area is between the photosensitive area and the vertical transfer analog shift register 2. In the device In each column, the photosensitive area, the transfer gate...
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