Particle-removing process before semiconductor etching
A semiconductor and process technology, applied in the field of pretreatment of semiconductor etching process, can solve problems such as difficulty in ensuring particle control effect and inability to clean silicon wafers
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Embodiment 1
[0023] In the polysilicon wafer etching process, the equipment used is the PM2 of the Equipment Technology Research Center of the North Microelectronics Base. The structure of the polysilicon wafer used is: 100 Ȧ of silicon dioxide, 3050 Ȧ of polysilicon, and a silicon wafer (substrate substrate).
[0024] The etching process is mainly divided into the following steps:
[0025] 1. Send the silicon wafer to the surface of the electrostatic chuck in the chamber;
[0026] 2. Apply the electrostatic chuck voltage, and fix the silicon wafer on the surface of the electrostatic chuck through electrostatic attraction;
[0027] 3. Through the process gas;
[0028] 4. The pendulum valve adjusts the pressure to the set value;
[0029] 5. Add the lower electrode to start the glow;
[0030] 6. The etching process starts. The etching process mainly includes the following steps:
[0031] 1) BT (Break through), that is, the removal of the natural oxide layer, the process parameters are: ...
Embodiment 2
[0038] According to the method described in embodiment 1, difference is, the process that silicon chip is carried out pretreatment before BT step:
[0039] (1) The chamber pressure is 8mT, the upper electrode power is 400w, and the carrier gas is N 2 60sccm, Cl 2 10 sccm, SF 6 20 sccm, O 2 10sccm, the total gas flow rate is 100sccm, and the time is 5s.
[0040] (2) The chamber pressure is 1mT, the upper electrode power is 400w, and the carrier gas is He 3 0 sccm, N 2 20sccm, the time is 10s.
[0041]After the above process, the detection standard is that the number of particles with a size of 0.2um-3um is less than 25 (200mm wafer etch), and it is observed by Surfscan 6420Unpatterned WaferInspection of KLA Company, such as figure 2 As shown, the particle distribution on the wafer can be seen. The lower part of the figure is the particle size distribution range. Specifically, 8 particles with a particle size of 0.2um-3um are obtained.
Embodiment 3
[0043] According to the method described in embodiment 1, difference is, the process that silicon chip is carried out pretreatment before BT step:
[0044] (1) The chamber pressure is 20mT, the upper electrode power is 200w, and the carrier gas is N 2 100sccm, SF 6 40sccm, the time is 25s.
[0045] (2) The chamber pressure is 0.1mT, the upper electrode power is 500w, and the carrier gas is He10sccm, Ar40sccm, N 2 10sccm, the time is 30s.
[0046] After the above process, the detection standard is that the number of particles with a size of 0.2um-3um is less than 25 (200mm wafer etch). Through the detection of Surfscan 6420 Unpatterned WaferInspection of KLA Company, we get the particles with a particle size of 0.2um-3um as 10 pieces.
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