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Method for preventing fluorine diffusion in manufacturing process of fluorine-silicon glass

A technology using fluorosilicate glass and manufacturing technology, which is applied in the field of integrated circuit manufacturing technology and can solve problems such as corrosion and device failure

Inactive Publication Date: 2006-10-11
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Fluorine element has a strong corrosive ability, it will corrode the tantalum metal barrier layer, causing a large amount of metal copper to diffuse in the insulating material, causing device failure

Method used

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  • Method for preventing fluorine diffusion in manufacturing process of fluorine-silicon glass
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  • Method for preventing fluorine diffusion in manufacturing process of fluorine-silicon glass

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Embodiment Construction

[0031] Implementation steps of the present invention are as follows:

[0032] (1) According to the conventional process steps, the manufacture of the Damascus metal wire structure is completed. like figure 1 As shown, the fluorosilicate glass low dielectric material 1 is constructed on the bottom barrier layer 2 .

[0033] (2) if figure 2 As shown, the plasma surface treatment was carried out, the treatment time was 50 seconds, the air pressure was set to 5 Torr, 10 Torr, 30 Torr or 50 Torr, the power was selected to be 100 W, 150 W or 500 W, and the temperature was selected to be 150 W. degrees, 250 degrees or 400 degrees, the gas source is an inert gas helium, neon, argon, krypton or xenon, and the reaction gas source is carbon monoxide CO, carbon dioxide CO 2 , sulfur dioxide SO 2 , Nitrogen N 2 Then cleaning and annealing are carried out. After the plasma surface treatment, the fluorine concentration on the surface of the fluorosilicate glass low dielectric material...

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Abstract

The invention relates to a fluorine nonproliferation method in the manufacturing technique using fluosilicic glass, after finishing manufacturing Damascus wire structure, disposing fluosilicic glass dielectric with plasma for 1-5 times, reducing surface fluorine concentration of fluosilicic glass low dielectric materials, then depositing protective covering suppressing fluorine diffusion, finally, etching bottom barrier layer, completing Damascus structure.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing technology, in particular to a method for preventing fluorine diffusion in the manufacturing technology using fluorosilicate glass. Background technique [0002] With the continuous improvement of integrated circuit manufacturing technology, the volume of semiconductor devices is becoming smaller and smaller, and it is more difficult to connect them. The formula for calculating multilayer wiring capacitance is: [0003] C = 2 ( C l + C v ) = 2 k ϵ 0 LTW ( 1 W 2 + 1 T 2 ...

Claims

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Application Information

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IPC IPC(8): C03C21/00C03C15/00
Inventor 朱骏
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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