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ITO thin film and method for producing same

A technology of ITO and thin film, applied in cable/conductor manufacturing, chemical instruments and methods, inorganic chemistry, etc.

Inactive Publication Date: 2006-10-04
JAPAN SCI & TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0020] However, these problems originate from the inherent properties of oxide semiconductors (ITO thin films), to which no researchers have paid attention

Method used

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  • ITO thin film and method for producing same
  • ITO thin film and method for producing same
  • ITO thin film and method for producing same

Examples

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Embodiment Construction

[0062] Preferred embodiments of the present invention will be described as follows:

[0063] First, a method for producing an ITO thin film by a spray method will be described below.

[0064] Relying on the spraying method in this example, the ITO thin film with a low tin concentration whose atomic percent concentration of tin is not higher than 4% is made of InCl 3 , SnCl 2 form a mixed solution with ethanol. In order to compare with the existing research results, ITO thin films with tin concentration as high as 4 to 14.6 atomic percent were also formed, and their characteristics were measured and analyzed.

[0065] As the spray solution in this example, indium chloride (InCl 3 3.5H 2 O, purity 99.99% manufactured by Wako Junyaku Corporation) and tin dichloride (SnCl 2 2H 2 O, purity 99.9% manufactured by Wako Junyaku) was dissolved and diluted in ethanol (purity 99.5% manufactured by Wako Junyaku), and the mixture was stirred with a magnetic rotor for 20 to 40 hours to...

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Abstract

A novel thin ITO film formed on a substrate and containing Sn at a concentration of 0.6 to 2.8 atomic %. The thin ITO film can be used as a transparent electrically conducting film. A method of producing the thin ITO film includes a step of spraying a mixed solution of an indium salt and a tin salt onto a substrate left in the atmosphere. A stannous chloride is used as the tin salt and an alcohol solution is used as the solution. The thin ITO film of a low Sn concentration (0.6, 1.3 or 2.8 atomic %) exhibits a markedly decreased absorption coefficient in a long wavelength region (lamda 500 to 1000 nm). The thin ITO film realizes a low resistivity (about 1.7 x 10<-4> omega.cm).

Description

technical field [0001] The present invention relates to ITO thin films. The present invention further relates to a method of manufacturing ITO thin films. Background technique [0002] The transparent conductive film is transparent to visible light (wavelength from 380 nm to 780 nm) and has high electrical conductivity (volume resistivity 1×10 -3 Ω·cm or less). Among them, the representative ITO (indium tin oxide, In 2 o 3 :Sn) thin films have been used as the main electronic materials for liquid crystal displays (LCDs), solar cells and touch screens, and for preventing fogging in windows such as refrigerators, automobiles and aircraft. By utilizing its infrared shielding effect, ITO films are also applied to building window glass (low E windows) and films that selectively transmit light, as well as plane heat generation, and can prevent static electricity and static electricity / Electromagnetic shielding. [0003] With the development of information and communication ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G15/00C01G19/00H01B5/14H01B13/00C03C17/25
CPCC03C2217/24C01P2002/84C03C2218/112C01P2006/40C01P2006/60C03C2217/215C03C2218/11C01P2002/72C03C17/25C01G19/00C01G15/00
Inventor 藤田安彦
Owner JAPAN SCI & TECH CORP
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