Radio-frequency micro-electronic mechanical double-film parallel capacitive type switch and preparation method thereof

A micro-electro-mechanical and capacitive technology, applied in the direction of electrostatic relays/electro-adhesion relays, circuits, relays, etc., can solve the problems of poor power handling capability and limit the application of MEMS switches, achieve low static power consumption, and solve self-locking effects , the effect of low insertion loss

Inactive Publication Date: 2006-09-13
SOUTHEAST UNIV
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  • Abstract
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  • Claims
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Problems solved by technology

However, electrostatic drive also has its inherent problems, that is, the reliability of high power, in other words, the poor power handling capability, which limits the application of MEMS switches in the radio frequency field.

Method used

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  • Radio-frequency micro-electronic mechanical double-film parallel capacitive type switch and preparation method thereof
  • Radio-frequency micro-electronic mechanical double-film parallel capacitive type switch and preparation method thereof
  • Radio-frequency micro-electronic mechanical double-film parallel capacitive type switch and preparation method thereof

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Embodiment Construction

[0039] For the radio frequency micro-electromechanical double-membrane bridge parallel capacitive switch structure of the present invention, we have designed a complete implementation scheme and obtained better characteristics through software simulation. The structural scheme of this radio frequency microelectromechanical double-membrane bridge parallel capacitive switch is as follows:

[0040] The switch is made on a gallium arsenide substrate 1, and consists of a coplanar waveguide port 2, a switch bridge 3, a ground connection line 4, a DC control electrode 5, a coplanar waveguide ground matching area 6, and a silicon nitride upper dielectric layer 91 , silicon nitride lower dielectric layer 92; the coplanar waveguide ground wire is located around the gallium arsenide substrate 1, the switch bridge 3 is located in the middle of the gallium arsenide substrate 1, and is also a part of the signal line, using double-ended Realized by fixed support beam; above the switch bridge...

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Abstract

A RF micro-electronic mechanical double-layer membrane bridge parallel condenser switch is used in RF microwave circuit, said structure uses a double end fixing strut beam as the switch membrane bridge and applies a double membrane structure to resolve the self-execution and self locking effect caused by RF high power including: a switch is installed on a GaAs substrate, a coplanar-waveguide is taken as a port of a switch, the switch bridge is part of a signal line realized by a fixed double end beam, the connection line of the coplanar-waveguide earth line is set above the signal line switch bridge, which is also the earth coupled line of the switch, a DC control electrode is below the signal line switch bridge and a SiN medium layer grows on the opposite faces of the DC electrode, earth connection line and the switch bridge, MMIC technological process is applied and polyimide is used as a sacrifice layer.

Description

technical field [0001] The invention relates to a radio-frequency micro-electro-mechanical system double-membrane bridge parallel capacitive switch and a manufacturing method thereof, belonging to the technical field of micro-electro-mechanical systems (MEMS). Background technique [0002] Compared with traditional semiconductor active switches such as FET and PIN diode switches, MEMS capacitive switches have many advantages, such as: eliminating contact resistance and diffusion resistance in ohmic contacts, thus greatly reducing the resistance loss of the device; linearity Very good, significantly reduces the harmonic and intermodulation components of the switch; has a high switch capacitance ratio, and the on / off capacitance ratio of a MEMS switch is about 20-100 for a typical size; electrostatically driven RF MEMS switch It has extremely low DC power consumption, with a typical transient power consumption of 10nJ; it can be fabricated on almost any substrate. However, el...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01H59/00H01H49/00
Inventor 廖小平董乔华
Owner SOUTHEAST UNIV
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