Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of magneto-resistor film for improving accuracy of electronic compass

An electronic compass and magnetoresistance technology, which is applied in the field of preparation of magnetic multilayer films, achieves the effects of improving precision, improving sensitivity, and facilitating preparation

Inactive Publication Date: 2006-07-26
UNIV OF SCI & TECH BEIJING
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a new magnetoresistance film material structure to solve the problem of improving the accuracy of the electronic compass

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of magneto-resistor film for improving accuracy of electronic compass

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] Example 1: Preparation of a magnetic multilayer film in a magnetron sputtering apparatus. First, the single crystal Si (001) substrate was ultrasonically cleaned with organic chemical solvent and deionized water, and then mounted on the sample base of the sputtering chamber. The substrate is cooled by circulating water, and a magnetic field of 150-250 Oe is applied parallel to the direction of the substrate. Sputtering chamber background vacuum 3×10 -5 Pa, under the condition of argon gas (purity of 99.99%) pressure of 0.5 Pa during sputtering (Ni 0.81 Fe 0.19 ) 54 Cr 36 (50) / Ni 0.81 Fe 0.19 (300) / Ta(6); Then, the thin film is processed into a magnetoresistive sensor element with a line width of 30 microns through a general semiconductor processing technology. Combined with the semiconductor processing technology, the thickness of 8 microns Ni is deposited on both sides of the component parallel to the strip-shaped component. 0.81 Fe 0.19 film. Ni deposited 0.81 Fe 0.19 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This invention provides one process method for electromagnetic resistance film to improve compass accuracy, which compeers the following steps: First depositing Ni-Cr / NiFe / Ta on the clean glass slice or single silicon base slice; Then processing the film into magnetic resistance sensor elements with width as 2 to 50 micrometer through common process; then combining semiconductor to process element two sides bar parts with thickness of 3 to 10 micrometer. The process of the film is in the magnetic control splash device with vacuum degree as 1X10-5í½6X10-5Pa and splash argon gas pressure as 0.4 to 0.7 Pa and the base slice uses recycle water for cooling and the base slice direction is added with magnetic field of 150 to 2500e to induce one magnetic direction.

Description

Technical field [0001] The invention belongs to the technical field of preparation of magnetic multilayer films, and in particular provides a preparation method of a magnetoresistance film that improves the accuracy of an electronic compass. Background technique [0002] Electronic compasses can be made using magnetoresistive film materials. Electronic compasses are also called digital compasses, which are electronic devices that use the geomagnetic field to determine the north pole. Although GPS has a wide range of applications in navigation, positioning, speed measurement, and orientation, its signal is often blocked by terrain and ground objects, which greatly reduces the accuracy and even cannot be used. Especially in urban areas with high-rise buildings and densely-vegetated forests, the effectiveness of GPS signals is only 60%; and in stationary situations, GPS cannot give heading information. To make up for this shortcoming, a combined navigation and orientation method can...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12H10N50/01
Inventor 于广华张辉腾蛟王立锦李希胜朱逢吾
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com