Perpendicular magnetic recording medium, method for preparing the same and magnetic recording equipment
A magnetic recording medium and magnetic recording technology, applied in magnetic recording, magnetic recording layer, data recording, etc., can solve problems such as difficult to increase recording density, difficult to improve medium performance, etc., and achieve the effect of improving recording capacity
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Embodiment 1
[0077] This example produced a figure 1 Two-layer vertical media of the structure shown. The non-magnetic substrate 10 used is a chemically strengthened glass substrate (for example, N-5 glass substrate produced by HOYA Corporation) having a smooth surface. After cleaning, the substrate was placed in a DC magnetron sputtering device, and was coated with Co in a 5mTorr (0.67Pa) argon 91 Zr 5 Nb 4 The target forms a soft magnetic backing layer 20 composed of amorphous CoZrNb with a thickness of 150 nm. Then use Ni in 30mTorr (4.0Pa) argon atmosphere 84 Fe 13 Si 3 The target forms a seed layer 30 having a thickness of 10 nm and consisting of soft magnetic NiFeSi.
[0078] Next, use Ru under the pressure of 30mTorr (4.0Pa) 95 Si 5 The target deposits a RuSi underlayer 40 with a thickness of 10 nm. The gas in the DC magnetron sputtering equipment is all argon at the beginning of the deposition. After starting the deposition, start adding nitrogen to the argon to maintain...
Embodiment 2
[0082] A two-layer vertical medium was obtained by the same procedure as in Example 1, except that the bottom layer 40 was formed as follows. In 30mTorr (4.0Pa) Argon atmosphere 95 Si 5 A RuSi underlayer 40 is deposited with a thickness of 5 nm. After deposition starts, press the Figure 5 Varying the sputtering input power is shown. The gas in the equipment was argon throughout the deposition steps.
Embodiment 3
[0084] A two-layer vertical medium was obtained by the same procedure as in Example 1, except that the bottom layer 40 was formed as follows. In 30mTorr (4.0Pa) Argon atmosphere 95 Si 5 A RuSi underlayer 40 is deposited with a thickness of 5 nm. After deposition starts, press the Image 6 Varying the sputtering input power is shown. The gas in the equipment was argon throughout the deposition steps.
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