Imaging device and imaging method
一种成像装置、探测装置的技术,应用在辐射控制装置、带有单个拾取装置的信号发生器、图像通信等方向,达到良好色彩还原性的效果
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no. 1 example 〕
[0041] Such as figure 1 As mentioned above, the visible light and near-infrared light imaging device according to the present invention has an optical lens 1 . The optical lens 1 is an optical system whose focal length varies according to wavelength, and causes three components of visible light and near-infrared light in different wavelength regions to form images at positions different according to their wavelengths. The optical lens 1 gathers light from an external object and forms an image on the imaging element 2 . exist figure 1 The lower part of , the light beams from the optical lens 1 are displayed separately through different wavelengths. As described above, the optical lens 1 forms images at different positions depending on the wavelength. this is in figure 2 A more detailed display in . For example, if the 470nm blue light is in focus reference A, the 520nm green light is 0.4μm longer in focus than reference A. Likewise, red light at 700 nm has a focal lengt...
no. 2 example
[0060] under, Figure 8 Showing the structure of the imaging element related to the second embodiment, Figure 9 is an equivalent circuit diagram of the imaging element related to the second embodiment. exist Figure 8In the shown imaging element, the visible light detecting portion and the near-infrared light detecting portion are provided in one pixel. The diagram shows a pixel including a detection section to separate and detect three components of visible light and near-infrared light in different wavelength regions, four components in total. In other words, the four current detectors 23, 24, 25, and 26 provided in one pixel detect B, G, and R of visible light and near-infrared light.
[0061] Such as Figure 8 As shown, an n-type doped region 19 of an n-type semiconductor is formed on a p-type semiconductor substrate 9 . Also, a p-type doped region 20 is formed thereon. In addition, an n-type doped region 21 is formed thereon, and a p-type doped region 22 is formed ...
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