Operation scheme for spectrum shift in charge trapping non-volatile memory
A charge capture, operation and storage technology, applied in static memory, read-only memory, information storage, etc., can solve the problem of difficult storage of charge and achieve good durability and reliability
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[0104] Please refer to FIG. 1A, which shows a schematic diagram of a charge trapping memory cell. The substrate in the figure includes n+ doped regions 150 and 160 , and a p-doped region 170 located between the n+ doped regions 150 and 160 . The memory cell further includes a bottom dielectric structure 140, a charge trapping structure 130, a top dielectric structure 120, and a gate 110, wherein the bottom dielectric structure 140 is located on the substrate , the charge trapping structure 130 is a bottom oxide layer (bottom oxide) located on the bottom dielectric structure 140, the top dielectric structure 120 is a top oxide layer (top oxide) located on the charge trapping structure 130, and the gate 110 is located on the top dielectric on the electrical structure 120 . The top dielectric layer is preferably a silicon dioxide (silicon dioxide) and silicon oxynitride (siliconoxynitride) with a thickness of about 5 to 10 nanometers, or other similar high dielectric constant ma...
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