Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

The management method and device of working solution level

A management method and developer technology, applied in optics, photography, opto-mechanical equipment, etc., can solve the problem that carbonate is not taken into account and cannot completely eliminate the influence of carbon dioxide, and achieve the maintenance of developing sensitivity, precise management and high precision. Effect

Inactive Publication Date: 2005-09-07
西村 保二 +1
View PDF1 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] This management device can detect in real time the developer solution concentration and the dissolved photoresist concentration as the developer solution deterioration index, and utilize it in the management of the developer solution, which is an advantage. However, the absorption of carbon dioxide in the above-mentioned air (that is, the developer solution Combination with carbon dioxide in the ambient atmosphere) the impact of carbonate formation is not considered
[0006] However, in fact, the carbonate concentration will affect the concentration of the developer detected by the conductivity meter and the dissolved photoresist concentration detected by the absorptometer. The value detected by the device cannot be said to be accurate. or actual developer concentration and dissolved photoresist concentration
[0007] As a method for reducing the influence of carbon dioxide, although Patent Document 1 discloses nitrogen purge (purge) that uses nitrogen blanketing in the development step, this method cannot completely eliminate the influence of the carbon dioxide because the substrate moves in and out during the development step. Effect of carbon dioxide

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • The management method and device of working solution level
  • The management method and device of working solution level
  • The management method and device of working solution level

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] figure 1 It is a flowchart showing the processing procedure of an example of the photoresist developer management method of the present invention; figure 2 , image 3 (a), image 3 (b), Figure 4 , and FIG. 5 are graphs showing Curve 1, Curve 2, Curve 3, Curve 4, and Curve 5 used in the photoresist developer management method of the present invention, respectively.

[0041] The photoresist developer management method of the present invention is a method for concentration management of a photoresist (photosensitive organic resin) developer used in a liquid crystal substrate manufacturing process, a printed circuit board manufacturing process, a semiconductor substrate manufacturing process, etc., Although the absorbance of the developing solution is also measured, unlike the prior art, the dissolved photoresist concentration is not detected from the measured absorbance, but the peak wavelength is obtained from its spectral analysis, and the carbon contained in the de...

Embodiment 2

[0064] Figure 6 It is a flowchart showing the processing procedure of another example of the method for managing a developing solution for photoresist of the present invention.

[0065] In this management approach, the figure 1 In the shown comparison, only step S11 is different, and subsequent steps S12 to S18 are the same as figure 1 Steps S1 to S7 are the same. That is, this management method is characterized in that, in performing figure 1 Before the treatment, remove the air bubbles of the developer that is to be managed.

[0066] The air bubbles are contained in the developer due to gas-liquid mixing that occurs when the developer is released into nitrogen gas under nitrogen scrubbing, or mixed with air (containing oxygen, nitrogen, carbon dioxide, etc.) when nitrogen scrubbing is insufficient. Although the bubbles have no influence on the sensitivity of the developer, they have an influence on the measurement of the conductivity, ultrasonic velocity, and absorbance...

Embodiment 3

[0068] Figure 7 It is a pipeline system diagram showing the overall structure of the developing solution management device for photoresist of the present invention.

[0069] The developer solution management device 10 for photoresist is a device that embodies the management method of the present invention, and has a measurement unit 6 including a conductivity meter (CI) 1 for measuring the conductivity of the developer solution, and a Calculate the apparent developer concentration (TM1) and apparent dissolved photoresist concentration (PR1) based on the relationship between the electrical conductivity of the developer and the ultrasonic propagation velocity with an ultrasonic velocity meter (US) 2 for measuring the ultrasonic velocity; and Equipped with: an absorbance photometer 3 (UV-Abs) used to measure the absorbance, and the carbonate concentration is calculated for the correlation between the peak wavelength difference (δw1) obtained from the spectral analysis of the abs...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method and an appararutus for controlling a developer for photoresist by which practical effective developer concentration and effective dissolved resist concentration can be obtained accurately in real-time while considering effects of carbonate concentration. An apparent developer concentration (TM1) and an apparent dissolved resist concentration (PR1) are calculated from the correlation between conductivity and ultrasonic propagation rate of the developer. Carbonate concentration (TMAC1) is calculated from the peak wavelength difference ([delta]wl) obtained by spectral analysis for the absorbent of the developer and by using the correlation between the peak wavelength difference and the carbonate concentration of the developer. Effective dissolved resist concentration (PR2) and effective developer concentration (TM2) are calculated from the obtained carbonate concentration (TMAC1) while considering effects of the carbonate concentration on the dissolved resist concentration and on the developer concentration obtained, the effects which are preliminarily obtained by an experiment of blowing carbonic acid gas.

Description

technical field [0001] The present invention relates to a management method and a management device for managing the concentration of a developer for photoresist (photosensitive organic resin) used in a liquid crystal substrate manufacturing process, a printed circuit board manufacturing process, a semiconductor substrate manufacturing process, and the like. Background technique [0002] In the manufacturing process of liquid crystal substrates, an alkaline aqueous solution such as tetramethylammonium hydroxide (TMAH) aqueous solution is used as a photoresist developing solution. This developing solution reacts with the acid in the photoresist, and due to carbon dioxide and Oxygen absorption and reaction will reduce the developer concentration and gradually reduce the effective sensitivity during use, which is the problem. In addition, with the development, the photoresist dissolved in the developer solution increases, and the concentration of dissolved photoresist increases...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/30G03F7/26G03F7/32H01L21/027
CPCG03F7/0046G03F7/0395G03F7/091G03F7/3021G03F7/32G03F7/322G03F7/422G03F7/425
Inventor 臼井透
Owner 西村 保二
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products