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Low voltage high speed TTL and Not gate circuit and its method for improving operation speed

A non-gate circuit and operating speed technology, which is applied in the direction of improving switching speed and logic circuits with logic functions, etc., can solve the problems of large saturation storage time and power consumption, and achieve the effect of avoiding the effect of desaturation

Inactive Publication Date: 2005-08-03
HEILONGJIANG UNIV +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Bipolar circuits have been used in many high-speed circuits and will maintain this advantage for a long time in the future, but there are still some inherent problems: large saturation storage time and power consumption

Method used

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  • Low voltage high speed TTL and Not gate circuit and its method for improving operation speed
  • Low voltage high speed TTL and Not gate circuit and its method for improving operation speed
  • Low voltage high speed TTL and Not gate circuit and its method for improving operation speed

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Embodiment Construction

[0045] Symbol in the figure: V x1 = V(x1), V x2 = V(x2), V y = V(y), V b1 = V(b1), V c1 = V(c1), V b2 = V(b2), I b2 =IB(Q2),I e3 = IE(Q3), I e4 = IE(Q4), I c4 = IC(Q4), I e11 = IE(Q11), I e12 = IE(Q12), I Rb2 = I(Rb2), I Vc =I(VC ).

[0046] The TTL NAND gate circuit of the present invention includes two parts, a logic stage and an output stage. The input to the logic stage is x 1 and x 2 , the logic stage output is Q 2 base of the tube b 2 , enter x 1 、x 2 and output b 2 There is an 'and' relationship between them, that is, b 2 =x 1 x 2 . The output stage is an inverter, the output stage input b 2 There is a non-relationship between output y. First of all, no specific regulations are proposed for all transistors in the logic level, including the desaturation time t s Size, as long as the logic level input and output can achieve the purpose of fast following, forward driving and reverse extraction, and then reverse the requirements for each of the tri...

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Abstract

This invention discloses a low voltage high speed TTL, a NOT-gate circuit and a method for increasing operation speed with 1.5V working voltage. The circuit includes a logic stage and an output level, the output level is a Q2 triode inverter. The logic part is composed of multiple-tube Q1, an emitter follower Q3 and a floating bleeder tube Q4, the logic level uses feedback tracing and floating bleeder circuit, characterizing that the emitter input signal of Q1 is sent to Q3 base from Q1 based on base-base coupled way to realize up and down at nearly the same speed for the internal points, Q4 provides low-resistance bleeding channel to speed up Q2 block, Q4 reduces its emit flow to zero quickly to block the channel from Q1 to Q2 and reduce Q1 basic flow to increase Q3 to a large emit flow and speed up conduction of Q2.

Description

Technical field: [0001] The invention is a bipolar integrated circuit, specifically a TTL NAND gate circuit, which belongs to the technical field of integrated circuits. technical background: [0002] Integrated circuits can be divided into two categories: logic integrated circuits and linear integrated circuits. The former is also called digital integrated circuits, which are used in computers, digital communications, digital instruments, CNC machine tools, etc., and the latter are used for linear amplification. In addition, integrated circuits are divided into bipolar integrated circuits and MOS integrated circuits. Bipolar circuits are known for their high speed, while MOS circuits are known for their low power consumption. The two complement each other and are indispensable. Bipolar integrated circuits include TTL and ECL, etc. In addition to being used in small-scale integrated circuits and medium-scale integrated circuits, TTL circuits are also used in bipolar applica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/013H03K19/20
Inventor 刘莹方倩方振贤
Owner HEILONGJIANG UNIV
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