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Flash device, camera therewith, semiconductor laser and manufacture thereof

A flash device, semiconductor technology, applied in the direction of semiconductor lasers, cameras, lasers, etc., can solve the problem of insufficient light output power, etc., and achieve the effect of improving flash photography performance, low power consumption, and high output power

Inactive Publication Date: 2005-07-27
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, when light-emitting diodes are used as light sources of lighting devices in conventional devices as described above, sufficient light output power cannot sometimes be obtained

Method used

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  • Flash device, camera therewith, semiconductor laser and manufacture thereof
  • Flash device, camera therewith, semiconductor laser and manufacture thereof
  • Flash device, camera therewith, semiconductor laser and manufacture thereof

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0074] figure 1 is a schematic diagram of the internal structure of the semiconductor laser 10 used in the flash device related to the first embodiment of the present invention, and shows the structure for the photographic area for the standard size frame of film.

[0075] like figure 1 As shown, a plate-like submount 13 (radiation fin) is vertically provided in the circular stem portion 14 of the semiconductor laser 10 . The blue laser substrate 11 is placed on one side surface of the upper part of the auxiliary support 13, and blue laser light (wavelength 450 nm, GaN) is emitted from the blue laser light-emitting point 11 within the cross section of the blue laser substrate 11 . The red / infrared dual-wavelength monolithic laser 12 is placed slightly under the blue laser substrate 11 on the side surface of the submount 13 where the blue laser substrate 11 is placed. Infrared laser (790nm, GaAs) is emitted from the infrared light-emitting point 12a in the cross section of t...

no. 2 example

[0097] In the first embodiment, a plurality of laser beams of different wavelengths from semiconductor lasers are synthesized to obtain white light which is diffused with a reflective sheet to obtain a flash of light. In the second embodiment, white light is obtained from laser light of a single wavelength by applying three types of phosphors emitting red, green, and blue to a reflective sheet. Since the second embodiment and the first embodiment are the same except for the points described below, only the differences between the first and second embodiments will be described.

[0098] 10(a) and 10(b) are examples of emitter boards for scattering laser light used in a flash device related to a second embodiment of the present invention. Fig. 10(a) shows the entire reflection sheet 40, and Fig. 10(b) shows an enlarged part 40a. 11( a ) and 11 ( b ) are schematic diagrams showing an example of a reflective sheet for laser light scattering used in a flash device related to a sec...

no. 3 example

[0105] In the third embodiment, white light is obtained using a sapphire hexagonal laser and combining a blue laser beam with fluorescent beams from two types of phosphors that emit red and green light as a result of being activated by the blue laser. Since the third embodiment and the second embodiment are the same except for the points described below, only the differences between the third and second embodiments will be described.

[0106] Figure 13 is a schematic diagram of a sapphire hexagonal laser 50 used in a flash device related to a third embodiment of the present invention.

[0107] like Figure 13 As shown in , the sapphire hexagonal laser 50 has a hexagonal shape and is a crystal including a hexagonal structure obtained by forming GaN on a sapphire substrate. Blue laser beams 51a, 52a, and 53a are emitted from three adjacent surfaces of the sapphire hexagonal laser 50, and blue laser beams 51b, 52b, and 53b are emitted from the surface opposite to the three surfa...

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PUM

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Abstract

In an embodiment of a flash apparatus, a semiconductor laser device is used as a flash-use light source. Laser light beams are approximately evenly scattered by a reflector plate whose reflection surface is formed of Ag coarse film, whereby illumination of a wide range and safety are secured. In an embodiment of the semiconductor laser device, the semiconductor laser device is disposed such that a longitudinal direction of an imaging area 20 a of a camera and a wide direction of far-field patterns 11 a 1, 12 a 1 and 12 b 1 of laser light emitted from the semiconductor laser device match.

Description

technical field [0001] The present invention relates to a flash device using a semiconductor laser, a camera provided with the flash device, a semiconductor laser used in the flash device, and a method of manufacturing the semiconductor laser. Background technique [0002] Halogen lamps and xenon tubes have traditionally been used as light sources in test equipment and flash units in cameras. In such flash devices, the capacitor is pre-charged. By discharging the capacitor once, the halogen lamp or the xenon tube is made to emit light, thereby obtaining stronger illumination light. However, using a halogen lamp or a xenon tube has problems of a shorter life cycle, heat dissipation, and higher power consumption. [0003] Thus, the use of light-emitting diodes is proposed as lighting means, which have a low power consumption and a long life cycle. This lighting device eliminates uneven lighting distribution due to each light emitting diode being a point light source (see, f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03B15/02F21L4/00F21V33/00G03B15/03G03B15/05G03B17/02G03B17/28H01S5/022H01S5/10H01S5/323
CPCG03B15/05G03B2215/0567G03B2215/0582
Inventor 上村裕规
Owner SHARP KK
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