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Integrated device of semiconductor laser and wedge shaped waveguide modular speckle converter

A technology of speckle converter and wedge waveguide, which is applied in the field of optoelectronic integrated devices, can solve the problems of complex structure of speckle converter, difficult coupling, low yield of integrated devices, etc.

Inactive Publication Date: 2005-06-01
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

The advantage of this structure is that the beam divergence angle at the light output end is easy to control, but the disadvantage is that the structure of the mode-spot converter is complex, and the coupling between the active waveguide and the passive waveguide is also very difficult, which leads to low yield of integrated devices. high

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  • Integrated device of semiconductor laser and wedge shaped waveguide modular speckle converter
  • Integrated device of semiconductor laser and wedge shaped waveguide modular speckle converter

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Embodiment Construction

[0021] Combine below figure 1 and Fig. 2 illustrate the basic structure of the device of the embodiment of the present invention.

[0022] The basic structure of the device in this embodiment includes four regions: a substrate region 10 ; a light guiding region 20 ; a confinement region 30 ; and an electrode region 40 . The following is the specific structure of the device of this embodiment:

[0023] The substrate area 10; the substrate area 10 specifically includes:

[0024] n-type heavily doped indium phosphide substrate 11;

[0025] n-type doped indium phosphide buffer layer 12,

[0026] The light guide area 20, the light guide area 20 specifically includes:

[0027] The active layer 21 is not doped,

[0028] Undoped InGaAsP lower waveguide layer 22;

[0029] Undoped InGaAsP upper waveguide layer 23;

[0030] Restricted area 30, specifically restricted area 30 includes:

[0031] n-type doped indium phosphide lower confinement layer 31;

[0032] p-type doped indium...

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Abstract

The integrated device one semiconductor laser and wedged waveguide mode spot converter includes substrate area, light guiding area, limiting arean and electrode area. The limiting arean on the substrate includes one n-type lower limiting layer of doped InP; one p-type upper limiting layer of doped InP, which includes two layers, one layer on the light guiding arean and the other layer below the electrode area; one p-type layer of un-oxidized InAlAs stripes and Al-containing oxide stripes arranged alternately between two p-type upper limiting layers; and one optical medium film on two ends of the device. The electrode arean is made on the limiting arean and below the substrate area. The Al-containing oxide layer limits the injected current and laser field in the semiconductor laser part and makes the lower light guiding area form wedged waveguide in the wedged waveguide mode spot converter part.

Description

Technical field: [0001] The invention relates to an optoelectronic integrated device, in particular to a semiconductor laser and a wedge-shaped waveguide mode spot converter integrated device realized by using aluminum oxidation confinement. Background technique: [0002] In the direct optical connection between the semiconductor laser and the optical fiber, the coupling loss is very large, causing the cost of the coupling package of the optical module to account for 80-90% of the cost of the entire optoelectronic device module. To reduce the coupling loss between the semiconductor laser chip and the single-mode fiber, many high-cost techniques including micro-optomechanics and high-precision dynamic alignment have been developed. The coupling loss between the semiconductor laser chip and the single-mode fiber is mainly due to the mismatch of the intrinsic light field between the two. The mode spot of the semiconductor laser chip is small, only 1-2 microns and elliptical spo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/00H01S5/026
Inventor 刘志宏王圩
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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