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SiC/Cu composite materrial and preparation material

A technology of composite materials and particles, which is applied in the field of low-cost SiC/Cu composite materials and their preparation, and high density, and can solve the problems of difficult control of preparation methods, high production costs, and low density.

Inactive Publication Date: 2005-01-12
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problems that traditional electronic packaging materials cannot meet the performance requirements of low expansion and high thermal conductivity at the same time, and the existing SiC / Cu composite materials have low density, low thermal conductivity, difficult control of preparation methods, and high production costs

Method used

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  • SiC/Cu composite materrial and preparation material

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specific Embodiment approach 1

[0005] Embodiment 1: The SiC / Cu composite material in this embodiment is composed of SiC particles and copper materials, SiC particles account for 50-75 vol%, and copper materials account for 25-50 vol%; the particle size of the SiC particles is 10-100 μm; The copper material is copper or brass.

specific Embodiment approach 2

[0006] Embodiment 2: In this embodiment, SiC particles account for 60 vol%, and copper materials account for 40 vol%.

specific Embodiment approach 3

[0007] Embodiment 3: In this embodiment, SiC particles account for 66 vol%, and copper materials account for 34 vol%.

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Abstract

A SIC / Cu composite material is composed of SiC grains and Cu materials in which, SiC grains account for 50-75vol%, Cu material makes up of 25-50vol%. The invented preparation method includes: 1. filling, filling SiC grains into the cavity of a mold to be pressed into a frabricated block, 2. pre-heating: pre-heating the mold containing SiC grains to 900deg.C-1100deg.C and heating the Cu to be smelted 3. carting the melted Cu into the mold, 4. pressing and immersing: applying pressure by a press to immerse the Cu melt into the slots among SiC grains, 5. keeping pressure and cooling down 6. stripping and taking out the ingot.

Description

Technical field: [0001] The invention relates to a high-density, low-cost SiC / Cu composite material and a preparation process thereof. Background technique: [0002] Electronic packaging materials require high thermal conductivity and low expansion properties. Traditional electronic packaging materials are mainly ceramics and metals. The ceramic material Al 2 o 3 Although the thermal expansion coefficients of AlN, BeO, etc. are low, their thermal conductivity is poor, while metal materials such as Cu and Al have good thermal conductivity, but their thermal expansion coefficients are high, and it is difficult to meet the requirements of high thermal conductivity and low expansion at the same time. The coefficient of thermal expansion of typical SiC particles is 3.4×10 -6 / °C, the modulus of elasticity is 450GPa, and the density is as low as 3.2G / cm 3 , while the thermal conductivity of copper is as high as 397W / (m·℃), and the thermal expansion coefficient is only 17.7×10...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C1/00C22C29/04
Inventor 武高辉陈国钦姜龙涛张强
Owner HARBIN INST OF TECH
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