Slit double gap buncher and method for improved ion bunching in an ion implantation system

Abstract

An ion buncher stage for a linear accelerator system is disclosed for bunching ions in an ion implantation system. The ion buncher stage may be employed upstream of one or more linear accelerator stages such that the loss of ions in the linear accelerator system is reduced. The invention further includes an asymmetrical double gap buncher stage, as well as a slit buncher stage for further improvement of ion implantation efficiency. Also disclosed are methods for accelerating ions in an ion implanter linear accelerator.

Description

technical field [0001] The present invention mainly relates to an ion implantation system, and in particular, relates to an improved ion bunching method and equipment in the ion implantation system. Background technique [0002] In the manufacture of semiconductor devices, ion implantation is used to dope semiconductors with impurities. A high energy (HE) ion implanter is described in US Patent No. 4,667,111, which is assigned to the assignee of this patent and is incorporated herein by reference in its entirety. This high-energy ion implanter is used for deep implants in substrates to create, for example, inverted wells. For such deep implants, the implant energy is typically 1.5 MeV (megaelectron volts). Such injectors typically perform implants at energies of at least 300 keV to 700 keV, although lower energies are available. Some high energy ion implanters are capable of delivering ion beams with energy levels as high as 5 MeV. [0003] see figure 1 , shows a typica...

AI Technical Summary

Problems solved by technology

In conventional systems, where approximately 80% of the ions generated by the ion source may be lost (eg not delivered to the workpiece), it takes much longer to perform the desired implant

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