Two dimension photon crystal light swith having defect state and its application

Abstract

The present invention applies microprocessing technique to utilize high refractive index of semiconductor material to prepare high quality of two-dimensional photon crystal with defect state and optical switch can be realized by utilizing high third order-nonlinear polarizability and quick response time of semiconductor material. The produced optical switch can be widely used in field of optical communication and optical computer.

Description

Technical field [0001] The invention relates to an application technology using photonic crystals, in particular to a two-dimensional photonic crystal optical switch with defect states and applications thereof. Background technique [0002] Photonic crystals are an important basis for the preparation of integrated photonic devices. The optical switch prepared by using photonic crystals can be used as an optical multiplexer, optical regenerator, and applied to an optical sampling system. It can control the light transmission process very effectively. Therefore, it is very useful in the fields of optical computing and optical information processing. Important applications. However, the realization of optical switches requires high-quality photonic crystals, and the requirements for photonic band gaps are more stringent. Therefore, due to the limitation of photonic crystal preparation technology, there have been no experimental research reports on three-dimensional photonic crystal ...

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Problems solved by technology

However, the optical switch manufactured by using the photonic bandgap shift mechanism is easy to cause pulse deformation due to the large group velocity dispersion at the band edge

Moreover, since it is difficult to fabricate photonic crystals with sharp band edges, the efficiency of optical switches fabricated by the mechanism of photonic bandgap shift is not high.

Usually, people use the introduction of defect states in the photonic bandgap, and use the movement of defect states to realize optical switches (document 6, ShengLAN, SatoshiNISHIKAWA, HiroshiISHIKAWA, and OsamuWADA,"Engineering PhotonicCrystal Impurity Bands for Waveguides, All-Optical Switches and Optical DalayLines" , Ieice Trans.electron., 2002, E85-c(1): 181-189; Literature 7, Sheng Lan, SatoshiNishikawa, and Osamu Wada, "Leverging deep photonic band gaps in photonic crystalimpurity bands", Appl.Phys.Lett.2001 , 78(15): 2101-2103), using semiconductor materials to prepare one-dimensional photonic crystals through epitaxial growth technology, introducing defects through different thicknesses of grown materials, and using the movement of defects in the band gap of photonic crystals to realize photonic crystal optical switches , but this method has great defects: first, the preparation process of photonic crystals is very complicated, difficult to control, and the deviation caused by manufacturing is relatively large, making it difficult to prepare ideal photonic crystals; second, the energy of light transmission is in other Diffraction in 2D causes energy loss, making it inefficient

In addition, through the coupling of defect states (document 8 Sheng Lan and Hiroshi Ishikawa, "Coupling of defect pairs and generation of dynamical band gaps in the impurity bands of nonlinear photonic custals for all-optical switching", Journal of Applied Physics", 2002, 91(5 ): 2573-2577) to realize the optical switch, the pillars are arranged periodically to prepare photonic crystals, but due to the small size of the pillars, it is very difficult to arrange, and it is difficult to find the same frequency but field distribution when selecting defect states different modes, therefore, it is experimentally difficult to achieve

This greatly limits the practical application of photonic crystal optical switches

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