Purging method of semiconductor-manufacturing apparatus and manufacturing method of semiconductor device

Abstract

A method of purging a semiconductor manufacturing apparatus comprises a step of etching a CVD-deposited film deposited in a chamber (2) constituting a semiconductor manufacturing apparatus which has performed a process of forming a CVD film using a CVD process over a semiconductor wafer (12) by using an etching gas containing at least a halogen gas, and a step of purging a cleaning gas remaining in the chamber (2) by causing a gas containing hydrogen to flow into the chamber (2) after the step of etching the CVD-deposited film by using the cleaning gas.

Description

technical field [0001] The invention relates to a purification process of a semiconductor manufacturing device, in particular to a purification process after dry cleaning of a CVD (Chemical Vapor Deposition) device. Background technique [0002] Semiconductor manufacturing equipment, such as CVD equipment such as LP (low pressure)-CVD, will deposit silicon, silicon oxide, silicon nitride in its reaction tank (hereinafter referred to as the reaction chamber) or use it in semiconductor devices. other film materials. When such a CVD-deposited film becomes too thick, there is a problem of contamination in the reaction chamber due to film peeling. In addition, when the film thickness of the deposited film in the reaction chamber becomes non-uniform due to film peeling, there is another problem that it is difficult to uniformly form the CVD film to be formed on the semiconductor wafer. Therefore, in the past, before such problems became significant, it was resorted to using ClF ...

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Problems solved by technology

[0004] However, ClF 3 Corrosive gases such as etc. contain halogens with high electronegative properties. For this reason, the corrosive gases adhering to the surface of the reaction chamber cannot be sufficiently detached by short-term purification. As a result, long-term purification was conventionally required.

[0005] If it is a CVD method that can clean the reaction chamber at a low frequency, the long cleaning time after cleaning will not be a particular problem, but in the case of a CVD method that requires cleaning every time a CVD process is performed, it will be reduce productivity

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