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Organic field effect transistor

An organic field and transistor technology, applied in the field of organic field effect transistors, can solve problems such as non-solution and impractical, and achieve the effect of easy material selection

Inactive Publication Date: 2003-12-03
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, this method is not practical and not a realistic solution in order to operate the FET using only electricity

Method used

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  • Organic field effect transistor
  • Organic field effect transistor
  • Organic field effect transistor

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0091] In this example, it will be specified Figure 1B The organic FET shown in . First, a 50 nm thick gold film was formed on a glass substrate by vacuum evaporation through a mask having a first gate electrode pattern. Thus, a first gate electrode having a length of 500 μm on each side was formed.

[0092] Move the glass substrate to a chemical evaporation device. Xylylene Dimer (xylylene dimer) (product name: parylene, parylene manufactured by Parylene Japan) was heated under reduced pressure, and a heating tube heated to 680° C. was inserted for pyrosis. Therefore, radicals were generated Monomer. The generated radical monomer was introduced onto the substrate kept at room temperature to form a 300 nm thick polyparaxylylene film. This is the first gate insulating film.

[0093] Next, in order to form the first source electrode and the first drain electrode, a mask pattern was provided so that the length of the source-drain was 50 μm. Thus, a 50 nm-thick gold thin film...

example 2

[0101] In this example, the specific Figure 1B The organic FET shown in . First, a 50 nm thick gold film was formed on a glass substrate by vacuum evaporation through a mask having a first gate electrode pattern. Thus, a first gate electrode having a length of 500 μm on each side was formed.

[0102] Move the glass substrate to a chemical evaporation device. Xylylene Dimer (xylylene dimer) (product name: parylene, parylene manufactured by Parylene Japan) was heated under reduced pressure, and a heating tube heated to 680° C. was inserted for burning. Thus, a radical monomer was generated. The generated radical monomer was introduced onto the substrate kept at room temperature to form a 300 nm thick polyparaxylylene film. This is the first gate insulating film.

[0103] Next, in order to form the first source electrode and the first drain electrode, a mask pattern was provided so that the length of the source-drain could be 50 μm. Thus, a 50 nm-thick gold thin film was for...

example 3

[0111] In this example, it will be specified Figure 1B The organic FET shown in . First, a 50 nm thick gold film was formed on a glass substrate by vacuum evaporation through a mask having a first gate electrode pattern. Thus, a first gate electrode having a length of 500 μm on each side was formed.

[0112] Move the glass substrate to a chemical evaporation device. Xylylene Dimer (xylylene dimer) (product name: parylene, parylene manufactured by Parylene Japan) was heated and evaporated under reduced pressure, and a heating tube heated to 680° C. was inserted for burning. Thus, a radical monomer was generated .The generated free radical monomer is introduced onto the substrate kept at room temperature to form a 300nm thick polyparaxylylene film. This is the first gate insulating film.

[0113] Next, in order to form the first source electrode and the first drain electrode, a mask pattern was provided so that the length of the source-drain could be 50 μm. Thus, a 50 nm-thic...

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Abstract

In an organic field effect transistor, including, on a substrate having an insulating surface, at least a gate electrode, a gate insulating film formed in contact with the gate electrode, an organic semiconductor film formed in contact with the gate insulating film, and at least a pair of source-drain electrodes formed in contact with the organic semiconductor film, a carrier generating electrode to which carriers can be injected in response to a gate signal is implanted within the organic semiconductor film.

Description

technical field [0001] The present invention relates to an organic field effect transistor (hereinafter referred to as "organic FET") using an organic semiconductor material. More specifically, the present invention relates to an organic thin film transistor (hereinafter referred to as "organic TFT") using a thin film containing an organic semiconductor material. Background technique [0002] In various semiconductor devices integrated with semiconductor elements such as television receivers, personal computers, and mobile phones, displays for displaying text and / or images are required to recognize information. Recently, flat panel displays such as liquid crystal displays using electro-optic properties of liquid crystals and organic EL displays using electric field emission of light from organic materials have been actively adopted. [0003] An active matrix driving method is well known as a form of flat panel display in which a thin film transistor (TFT) is provided for ea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/34H01L27/28H01L35/24H01L51/00H01L51/30H01L51/40
CPCG11C11/34H01L51/0512H01L51/002H01L51/055H01L51/0078H01L51/0059H01L51/102H01L27/283H01L27/28H01L51/0516H01L51/0081H01L51/0035H01L51/0021H01L27/281H10K19/201H10K19/00H10K19/10H10K71/30H10K71/60H10K85/111H10K85/631H10K85/311H10K85/324H10K10/468H10K10/462H10K10/481H10K10/82H01L29/78
Inventor 筒井哲夫
Owner SEMICON ENERGY LAB CO LTD
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