Method for forming integrated circuit with MONOS element and mixed signal circuit

A mixed-signal, integrated circuit technology, applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the complex and difficult problems of single-chip systems, reduce manufacturing process steps, reduce leakage current, and avoid reliability. Effect

Inactive Publication Date: 2003-03-26
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Also because the manufacturing process used to form logic elements such as metal oxide semiconductor transistors (MOSTransistor) and storage elements such as non-volatile memory (Non-Volatile Memory) elements is quite diverse, it is necessary to make logic elements and non-volatile memory elements. SoCs of components are very complex and difficult

Method used

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  • Method for forming integrated circuit with MONOS element and mixed signal circuit
  • Method for forming integrated circuit with MONOS element and mixed signal circuit
  • Method for forming integrated circuit with MONOS element and mixed signal circuit

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Embodiment Construction

[0021] It should be noted here that the manufacturing process steps and structures described below do not include a complete manufacturing process. The present invention can be implemented by various integrated circuit fabrication process technologies, only those fabrication process technologies required for an understanding of the present invention are mentioned here. The following will be described in detail based on the accompanying drawings of the present invention. Please note that the illustrations are in simple form and not drawn to scale, and the dimensions are exaggerated to facilitate understanding of the present invention.

[0022] refer to Figure 2A As shown, a substrate 200 is shown, and the substrate 200 includes at least one memory cell region (Array Region) for forming MONOS storage and a peripheral region (Periphery Region) for forming logic elements. The substrate 200 at least includes a silicon substrate with a lattice orientation, but is not limited to a...

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Abstract

The invention relates to a method for forming integrate circuit with and mixed signal, which integrates the non-volatile component such as MONOS storage and logic unit, for example MOS transistor and the PIP capacitor into the single chip of the system by using lesser manufacturing procedure steps.

Description

Field of invention: [0001] The present invention relates to a method for forming integrated circuits, in particular to a method for forming integrated circuits with MONOS (Metal-Oxide Nitride-Oxide Semiconductor) elements and mixed-signal (Mixed-Signal) circuits. Background of the invention: [0002] In view of the ever-increasing demand for integration and diversification of integrated circuits, the industry has widely adopted System on a Chip (SOC) components, which are components with different functions such as logic components and memory Components are integrated into a single chip, and these components are in an interactive relationship with each other. Also because the manufacturing process used to form logic elements such as metal oxide semiconductor transistors (MOSTransistor) and storage elements such as non-volatile memory (Non-Volatile Memory) elements is quite diverse, it is necessary to make logic elements and non-volatile memory elements. SoC of components is...

Claims

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Application Information

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IPC IPC(8): H01L21/82
Inventor 赖二琨陈昕辉陈盈佐黄守伟黄宇萍
Owner MACRONIX INT CO LTD
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