Electronic structure and forming method thereof

Abstract

An electrical conductor for use in an electronic structure is disclosed which includes a conductor body that is formed of an alloy including between about 0.001 atomic % and about 2 atomic % of an element selected from the group consisting of Ti, Zr, In, Sn and Hf; and a liner abutting the conductor body which is formed of an alloy that includes Ta, W, Ti, Nb and V. The invention further disclosesa liner for use in a semiconductor interconnect that is formed of a material selected from the group consisting of Ti, Hf, In, Sn, Zr and alloys thereof, TiCu3, Ta1-XTix, Ta1-XHfx, Ta1-XInxy, Ta1-XSnx, Ta1-XZrx.

Description

technical field [0001] The present invention generally relates to a method of forming an electrical conductor in an electronic structure, and more particularly, the present invention relates to a method of forming an electrical conductor containing up to 2 atomic percent impurity elements and is surrounded by Ti-containing lining around. Background technique [0002] Over the past decade, techniques for fabricating metal conductors to provide vias, lines, and other recesses in semiconductor chip structures, flat panel displays, and application package assemblies have been developed. For example, in the development of interconnect technology for very large scale integration (VLSI) structures, aluminum is used as the main metal source for contacts and interconnects in semiconductor regions on a single substrate or in semiconductor devices. Aluminum has been the material of choice due to its low price, good ohmic contact, and high electrical conductivity. However, pure alumin...

AI Technical Summary

Problems solved by technology

Any diffusion of copper atoms into the silicon substrate will cause device failure

Also, pure copper does not adhere well to oxygen-containing insulating materials such as silicon dioxide and polyimide

Images