Graphite crucible aluminum evaporation process for semiconductor production

Abstract

The invention discloses a graphite crucible aluminum evaporation process for semiconductor production, and relates to the technical field of semiconductor production. The method comprises the following steps: preheating a silicon wafer and a graphite crucible to 45-55 DEG C; placing the preheated silicon wafer on an objective table of a graphite crucible, and then vacuumizing the graphite crucible; after vacuumizing is completed, a high-purity aluminum steam source is ignited, aluminum steam is generated, an ultrasonic generator is started, ultrasonic treatment is conducted on the aluminum steam under the action of an ultrasonic external field, and the treated aluminum steam diffuses towards the silicon wafer and falls onto the silicon wafer to form an inner-layer aluminum film. According to the method, the coating film is divided into the inner-layer coating film and the outer-layer coating film, so that the adhesiveness of the coating film is better, the ultrasonic technology is adopted for assisting the coating film, the dispersity is higher, higher uniformity, thinner coating thickness and higher precision can be achieved, and the problems that an existing semiconductor aluminum evaporation process is low in aluminum film thickness quality control capability and poor in quality control capability are solved. The uniformity of the aluminum film is not ideal, and the product quality is low.

Description

technical field [0001] The invention belongs to the technical field of semiconductor production, in particular to a process for steaming aluminum in a graphite crucible for semiconductor production. Background technique [0002] Aluminum steaming refers to the manufacture of a uniform thin film aluminum layer, which is one of the key processes for connecting various semiconductor regions into integrated circuits, and is also an important process for improving the electrical conductivity of integrated circuits, especially for high-power devices and high-frequency devices. There are strict technical requirements for thickness and thickness. The aluminum evaporation process is a very important process in semiconductor production. Its production task is to evaporate aluminum film on the inner surface of the semiconductor. [0003] The basic process of vacuum aluminized film is as follows: close the inflation valve and high vacuum valve, pump the evaporation chamber, when the pre...

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Problems solved by technology

[0008] The object of the present invention is to provide a process for steaming aluminum in a graphite crucible for semiconductor production. By dividing the coating into an inner coating and an outer coating, the adhesion of the coating is better, and the coating is assisted by ultrasonic technology. The dispersion is higher, It can bring higher uniformity, thinner coating thickness and higher precision, and solve the problems of low quality control ability of aluminum film thickness, unsatisfactory uniformity of aluminum film and low product quality in the existing semiconductor aluminum evaporation process question

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