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Regional annealing treatment method for metal oxide film based on laser scanning

An oxide thin film, laser scanning technology, applied in rare earth metal oxides/hydroxides, chemical instruments and methods, lanthanide oxides/hydroxides, etc., can solve problems such as damage to substrates and material surface contamination , to achieve the effect of fast annealing speed, less pollution, improved optoelectronic properties and surface morphology

Pending Publication Date: 2022-04-29
SOUTH CHINA UNIV OF TECH
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  • Application Information

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Problems solved by technology

The traditional post-annealing process uses thermal annealing method, which requires long-term heat treatment at high temperature, which may cause the surface of the material to be polluted. In addition, long-term heat treatment is also easy to form a large amount of heat accumulation in the substrate and damage the substrate. Incompatible with temperature-sensitive flexible substrates such as flexible plastic substrates, thus limiting the application of flexible devices

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  • Regional annealing treatment method for metal oxide film based on laser scanning
  • Regional annealing treatment method for metal oxide film based on laser scanning
  • Regional annealing treatment method for metal oxide film based on laser scanning

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Embodiment 1

[0030] A method for regionally annealing metal oxide films based on laser scanning, comprising the following steps:

[0031] (1) Deposit and prepare a metal oxide film on a clean glass substrate by vacuum magnetron sputtering: use a vacuum magnetron sputtering method to deposit and prepare a layer of Nd with a thickness of 30nm on a glass substrate of 10mm×10mm -IZO film, the target used is made of indium oxide (Indium oxide) with a purity higher than 99.99% 2 o 3 ), zinc oxide (ZnO) and neodymium oxide (Nd 2 o 3 ) mixed with an atomic ratio of Nd:In:Zn=0.01:1:1.

[0032] (2) Excimer laser is used to process the metal oxide thin film sample. The direct variable is the energy of the laser emitted by the laser and the moving step of the workbench. The actual variable is the energy density and spot overlap rate of the laser reaching the surface of the metal oxide thin film sample. According to After setting the relevant parameters of laser annealing, the thin film sample is p...

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Abstract

The invention discloses a method for regional annealing treatment of a metal oxide film based on laser scanning. The method comprises the following steps: performing laser scanning treatment on a metal oxide film to realize annealing; the laser scanning mode can be combined with computer aided design, the processing range of the film sample is flexibly selected, and the process of carrying out thermal annealing on the whole sample in a traditional thermal annealing process is avoided; the laser scanning annealing method is simple to operate, high in annealing speed and short in consumed time; through scanning annealing of excimer laser on a film sample, the structural morphology, the electrical property and the optical property of the film are all improved.

Description

technical field [0001] The invention belongs to the technical field of metal oxide thin film preparation, and in particular relates to a laser scanning-based regional annealing method for metal oxide thin films. Background technique [0002] Transparent semiconductor oxide is an important optoelectronic material. Due to its high carrier mobility and high light transmittance in the visible light range, it is widely used in thin film transistors (Thin Film Transistor, TFT), Photoelectric devices such as solar cells, light-emitting diodes, and gas sensors have broad application prospects. [0003] Since the report of Indium-Gallium-Zincoxide (IGZO) thin-film transistors published by Hosono's research group at Tokyo Institute of Technology, metal-oxide semiconductors have attracted extensive attention from researchers. However, the cost of gallium oxide is relatively high, and a large amount of doping will increase the production cost of the device. In addition, the reliabilit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/245C01G9/02C01G15/00C01F17/224C01F17/10
CPCC03C17/245C01G9/02C01G15/00C01F17/224C01F17/10C03C2218/156C01P2002/72C01P2004/04C01P2006/60
Inventor 彭俊彪谢昕宁洪龙姚日晖梁宏富张旭张观广梁志豪
Owner SOUTH CHINA UNIV OF TECH
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