Photodiode, photodiode detector and manufacturing method thereof

Abstract

The invention provides a photodiode, a photodiode detector and a manufacturing method thereof. The photodiode comprises a substrate, a first doped region, a second doped region, a third doped region, an electrode wire, a dielectric layer and a first communicating hole, the substrate is provided with a first surface and a second surface which are opposite to each other, and the substrate is made of a first conductive type material; the first doped region is located in the substrate and is exposed from the first surface of the substrate; the first doped region is made of a second conductive type material; the second doped region is located in the substrate and is exposed from the second surface of the substrate; the second doped region is made of a second conductive type material; the dielectric layer is arranged on the second surface of the substrate; part of the electrode wire penetrates through the dielectric layer, the other part of the electrode wire is arranged on the side, away from the substrate, of the dielectric layer, and the electrode wire comprises a first electrode wire electrically connected with the second doped region; a first electric connecting column which is electrically connected with the first doped region and the first electrode wire is arranged in the first communicating hole; the third doped region is located in the substrate and exposed from the second surface of the substrate.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a photodiode, a photodiode detector and a manufacturing method thereof. Background technique [0002] Compared with the traditional front-illuminated photodiode detector, the back-illuminated photodiode has the advantages of high mounting reliability, small pixel pitch, easy splicing, small crosstalk and good consistency in the application of array modules; due to the back-illuminated photodiode The space charge region of the substrate is located on the inner side close to the front side, and the substrate needs to be thinned to ensure that the light enters from the back side. In this way, it is easy to cause the absorption path of the incident light in the substrate to become smaller, especially the absorption efficiency of the long wave is reduced, so that the photogenerated carriers generated in the space charge region are reduced, resulting in the back-illu...

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Problems solved by technology

In this way, it is easy to cause the absorption path of incident light in the substrate to become smaller, especially the absorption efficiency of long wavelengths is reduced, so that the photogenerated carriers generated in the space charge region are reduced, resulting in the back-illuminated photodiode having The photoresponsivity of semiconductor devices has decreased

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