High-brightness high-power semiconductor light-emitting device and preparation method thereof

A technology of light-emitting devices and semiconductors, applied in the direction of semiconductor lasers, laser components, optical waveguide semiconductor structures, etc., can solve the problems of high reliability, low cost, high integration, etc., to achieve reduced divergence angle, small divergence, light Divergent large effect

Active Publication Date: 2022-03-01
SUZHOU EVERBRIGHT PHOTONICS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Therefore, the technical problem to be solved by the present invention is to overcome the problem that the semiconductor light emitting device in the prior art cannot take into account high integration, high reliability and low cost while achieving high brightness and high power, so as to provide a high brightness and high power Semiconductor light emitting device and manufacturing method thereof

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  • High-brightness high-power semiconductor light-emitting device and preparation method thereof
  • High-brightness high-power semiconductor light-emitting device and preparation method thereof

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Embodiment 1

[0032]An embodiment of the present invention provides a high-brightness high-power semiconductor light-emitting device, refer to figure 1 ,include:

[0033] Semiconductor substrate layer 100;

[0034] A modulation structure 120 located on the semiconductor substrate layer, the modulation structure 120 comprising: a carrier modulation active layer 1201; a modulation structure located on the side of the carrier modulation active layer 1201 away from the semiconductor substrate layer 100 a tunnel junction 1202; a cavity extension layer 1203 located on the side of the modulation tunnel junction 1202 away from the carrier modulation active layer 1201;

[0035] The first active layer 140 located on the side of the modulation structure 120 away from the semiconductor substrate layer 100, the carrier concentration in the carrier modulation active layer 1201 is smaller than that in the first active layer 140 Carrier concentration: the first current confinement layer 160 located on th...

Embodiment 2

[0055] The difference between this embodiment and embodiment 1 is: refer to figure 2 , between the modulation structure 120 and the second Bragg mirror 210, the first active layer 140 to the Qth active layer are arranged, and Q is an integer greater than or equal to 2; the k+1th active layer is located in the kth active layer On the side away from the modulation structure 120, k is an integer greater than or equal to 1 and less than or equal to Q-1; the high-brightness and high-power semiconductor light-emitting device further includes: a first tunnel junction 250 to a Q-1 tunnel junction , the kth tunnel junction is located between the k+1th active layer and the kth active layer; the first current confinement layer 160 is located between the first tunnel junction 250 and the first active layer 140 .

[0056] The high-brightness and high-power semiconductor light-emitting device of this embodiment further includes: a first Bragg reflector 110 and a second Bragg reflector 210 ...

Embodiment 3

[0065] This embodiment provides a method for preparing a high-brightness and high-power semiconductor light-emitting device. Refer to figure 1 ,include:

[0066] S1: providing a semiconductor substrate layer 100;

[0067] S2: Forming a modulation structure 120 on the semiconductor substrate layer 100, the step of forming the modulation structure 120 includes: forming a carrier modulation active layer 1201 on the semiconductor substrate layer 100; A modulation tunnel junction 1202 is formed on the side of the active layer 1201 away from the semiconductor substrate layer 100; a cavity extension layer 1203 is formed on the side of the modulation tunnel junction 1202 away from the carrier modulation active layer 1201;

[0068] S3: Form the first active layer 140 on the side of the modulation structure 120 away from the semiconductor substrate layer 100, the carrier concentration in the carrier modulation active layer 1201 is smaller than that of the first active layer Carrier co...

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Abstract

The invention discloses a high-brightness and high-power semiconductor light-emitting device and a preparation method thereof. The high-brightness and high-power semiconductor light-emitting device comprises a semiconductor substrate layer; the modulation structure is located on the semiconductor substrate layer and comprises a carrier modulation active layer; the modulation tunnel junction is positioned on one side, deviating from the semiconductor substrate layer, of the carrier modulation active layer; the cavity extension layer is positioned on one side, deviating from the carrier modulation active layer, of the modulation tunnel junction; the first active layer is located on the side, away from the semiconductor substrate layer, of the modulation structure, and the carrier concentration in the carrier modulation active layer is smaller than that in the first active layer; and the first current limiting layer is positioned on one side, deviating from the modulation structure, of the first active layer. The high-brightness and high-power semiconductor light-emitting device has the advantages of high integration level, high reliability and low cost while realizing high brightness and high power.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a high-brightness and high-power semiconductor light-emitting device and a preparation method thereof. Background technique [0002] A semiconductor light-emitting device is a device that produces stimulated emission using a certain semiconductor material as a working substance. Between the energy band of the material and the energy level of the impurity (acceptor or donor), the particle number inversion of the non-equilibrium carrier is realized. When a large number of electrons and holes in the particle number inversion state recombine, stimulated emission occurs Because of its small size and high electro-optical conversion efficiency, semiconductor light-emitting devices are widely used. [0003] Semiconductor light-emitting devices can be applied in the field of artificial intelligence. With the deep development of the artificial intelligence era, the precision requir...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/20H01S5/183
CPCH01S5/20H01S5/2009H01S5/183H01S5/3095H01S5/18358H01S2301/16H01S5/18397H01S5/18311H01S5/1833H01S2301/18
Inventor 肖垚王俊苗霈刘恒李泉灵廖新胜闵大勇
Owner SUZHOU EVERBRIGHT PHOTONICS CO LTD
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