Light-emitting chip epitaxial wafer, manufacturing method thereof and light-emitting chip

A technology of light-emitting chips and manufacturing methods, which is applied to semiconductor devices, electrical components, circuits, etc., and can solve the problems of low light-emitting efficiency of light-emitting chips and the like

Active Publication Date: 2022-02-11
CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the deficiencies in the prior art above, the object of the present invention is to provide a light-emitting chip epitaxial wafer and its manufacturing method, and a light-emitting chip, aiming at solving the problem of The problem of low light-emitting efficiency of light-emitting chips

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  • Light-emitting chip epitaxial wafer, manufacturing method thereof and light-emitting chip
  • Light-emitting chip epitaxial wafer, manufacturing method thereof and light-emitting chip
  • Light-emitting chip epitaxial wafer, manufacturing method thereof and light-emitting chip

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Embodiment Construction

[0036] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0037] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terminology used herein in the description of the present invention is only for the purpose of describing specific embodiments, and is not intended to limit the present invention.

[0038] In the related art, as the size of the chip decreases, its luminous efficiency ...

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Abstract

The invention relates to a light-emitting chip epitaxial wafer, a manufacturing method thereof and a light-emitting chip. The active region light-emitting layer of the light-emitting chip epitaxial wafer comprises at least one superlattice, the superlattice comprises a quantum well sub-layer and a stress transformation sub-layer, the stress transformation sub-layer is formed on the quantum well sub-layer and enables the quantum well sub-layer to be transformed from compressive strain to tensile strain, the well width is increased, and the crystal quality is improved; and the stress conversion sub-layer and the quantum well sub-layer form a two-dimensional electron gas, so that more electrons exist in a local area, the carrier density in the thin layer is remarkably improved, the radiation recombination probability is improved, and the luminous efficiency is improved.

Description

technical field [0001] The invention relates to the field of light-emitting chips, in particular to a light-emitting chip epitaxial wafer, a manufacturing method thereof, and a light-emitting chip. Background technique [0002] Micro LED (Micro Light-Emitting Diode, tiny light-emitting diode) technology is LED miniaturization and matrix technology. It is the ultimate development form of Mini LED and a next-generation revolutionary display technology. The size of the Micro LED chip is 1 micron to 10 microns. Like OLED (Organic Light-Emitting Diode, organic light-emitting semiconductor), each pixel can be individually addressed and driven to emit light. The advantages of Micro LED technology lie in low power consumption, high brightness, ultra-high resolution and color saturation, fast response speed, and long life. [0003] Although the advantages of Micro LED are obvious, the technical challenges are relatively large. Although some people thought that Mini LED was a transi...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/00H01L33/12H01L33/32
CPCH01L33/06H01L33/12H01L33/325H01L33/0075
Inventor 周毅黄国栋刘勇兴
Owner CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD
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