Device and method for improving process deviation of multi-cavity equipment

Abstract

The invention provides a device and method for improving process deviation of multi-chamber equipment. The device is arranged on a multi-chamber reaction gas path, one end of the interior of the device adopts a conical surface structure, and the other end of the interior of the device adopts a straight hole structure. According to the device and the method provided by the invention, the structure / operation is simple, the price is low, the problem of high-efficiency blocking of gas channeling can be achieved by reasonably setting the internal aperture, finally, the thickness difference of the wafer surface film between the chambers is reduced, and the yield of the wafer is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and relates to a device and a method for improving the process deviation of multi-chamber equipment. Background technique [0002] In the field of semiconductor manufacturing, a variety of gases are widely used to react on the surface of the wafer to complete coating or etching processes. At this stage, in order to increase production capacity and reduce costs, when processing and cleaning chambers, multiple chambers often share a group of reactions In this way, a circuit structure of interconnection between chambers is formed, that is, under the process state, considering the difference in flow resistance between chambers, the reaction gas will also flow through the circuit of the cleaning chamber when it flows to its own chamber To other chambers, this will cause differences in the thickness of the film on the surface of the wafer between the chambers, which will affect the ...

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Problems solved by technology

[0002] In the field of semiconductor manufacturing, a variety of gases are widely used to react on the surface of the wafer to complete coating or etching processes. At this stage, in order to increase production capacity and reduce costs, when processing and cleaning chambers, multiple chambers often share a group of reactions In this way, a circuit structure of interconnection between chambers is formed, that is, under the process state, considering the difference in flow resistance between chambers, the reaction gas will also flow through the circuit of the cleaning chamber when it flows to its own chamber to other chambers, which causes differences in the thickness of the film on the wafer surface between the chambers, which affects the yield of the wafer

[0003] In response to this problem, at this stage, some adopt the isolation valve scheme, and some adopt the independent gas supply scheme between the chambers to prevent the gas from flowing to other chambers. Regarding the technical scheme of the isolation valve, the isolation valve will produce particles after a long period of use The problem is that for the independent gas supply scheme, the structure of the gas supply system will inevitably be enlarged, which will make the machine too compact and complicated, and at the same time greatly increase the cost of the machine

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