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A kind of unstable cavity semiconductor laser and preparation method thereof

A laser and semiconductor technology, applied in semiconductor lasers, lasers, laser parts and other directions, can solve the problems of increasing device cost and process complexity, and difficult to achieve promotion, and achieve high power output, stable distribution, and increased mode volume. Effect

Active Publication Date: 2022-07-22
CHANGCHUN UNIV OF SCI & TECH
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Problems solved by technology

[0005] However, the current manufacturing process of unstable cavity semiconductor lasers involves complex curved cavity surface processes, such as side polishing, deep etching, ion beam milling, ion milling, etc., which increases the cost and process complexity of the device, making it difficult to achieve popularization

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  • A kind of unstable cavity semiconductor laser and preparation method thereof
  • A kind of unstable cavity semiconductor laser and preparation method thereof
  • A kind of unstable cavity semiconductor laser and preparation method thereof

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Embodiment Construction

[0034] Hereinafter, specific embodiments of the present application will be described in detail with reference to the accompanying drawings, according to the detailed description, those skilled in the art can clearly understand the present application and can implement the present application. Without departing from the principles of the present application, the features of the various embodiments may be combined to obtain new embodiments, or instead of certain features of certain embodiments, other preferred embodiments may be obtained.

[0035] In the present application, the first curved grating 3 , the second curved grating 6 , the third curved grating 11 and the fourth curved grating 12 are described by using the first, the second, the third and the fourth respectively for the purpose of distinction. It can be referred to simply as a curved grating.

[0036] Likewise, the first etching groove, the second etching groove and the third etching groove may all be referred to a...

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Abstract

The present application belongs to the technical field of semiconductor lasers, and in particular relates to an unstable cavity semiconductor laser and a preparation method thereof. The current fabrication process of the unstable cavity semiconductor laser involves a complex curved cavity surface process, which increases the cost and process complexity of the device, and is difficult to popularize. The application provides an unstable cavity semiconductor laser, comprising a first cavity film, a laser epitaxial structure and a second cavity film arranged in sequence, and the laser epitaxial structure is provided with a curved grating, a deep etched groove, a trapezoidal electrode region and Conical electrode area. The curved grating and the second cavity mask form an unstable resonant cavity, which forms a laser output mechanism based on the lateral leakage mode, which is beneficial to improve the utilization rate of the laser gain medium and suppress the spatial hole burning and filament; the special setting of the grating structure and area The laser beams passing through the tapered area are overlapped to form a beam combination, which is beneficial to improve the beam quality and can realize the single-tube dual-wavelength output of the laser.

Description

technical field [0001] The present application belongs to the technical field of semiconductor lasers, and in particular relates to an unstable cavity semiconductor laser and a preparation method thereof. Background technique [0002] The current unstable cavity semiconductor laser is a kind of semiconductor laser that realizes the lateral or lateral expansion of the laser resonance region based on a special waveguide or curved cavity surface structure. Due to inherent disadvantages such as optical filaments, it has achieved significant advantages such as single transverse mode, near-diffraction limit light output, and high coherence. [0003] In the existing related research, there are mainly four kinds of structures that form the working mechanism of the unstable cavity: curved end face, lateral refractive index anti-waveguide, curved grating coupler and special microstructure. In comparison, the first two are more common. The California Institute of Technology has desig...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/10H01S5/028H01S5/068
CPCH01S5/1089H01S5/0287H01S5/068
Inventor 邹永刚田锟范杰石琳琳张贺王海珠兰云萍徐英添马晓辉金亮徐睿良
Owner CHANGCHUN UNIV OF SCI & TECH
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