Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Magnetic resistance test structure of patterned magnetic tunnel crystal circle, and use method thereof

A technology of magnetic tunnel junction and test structure, applied in the fields of magnetic field-controlled resistors, semiconductor/solid-state device testing/measurement, electromagnetic device manufacturing/processing, etc. breakdown, etc.

Pending Publication Date: 2021-11-12
致真存储(北京)科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The inevitable single device size error will inevitably affect the accuracy of RA
In addition, the size of a single device is very small, such as a micron junction, there is a risk of device breakdown during the test, and such damage directly affects the accuracy of the measurement results
And in the preparation process, since the size of the magnetic tunnel junction (MTJ) directly affects the data writing ability and product reliability of the magnetic random access memory, it is impossible to reduce the impact of external factors in the preparation process by adjusting the size of the test device and the product to be tested. Perturbation of the test device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetic resistance test structure of patterned magnetic tunnel crystal circle, and use method thereof
  • Magnetic resistance test structure of patterned magnetic tunnel crystal circle, and use method thereof
  • Magnetic resistance test structure of patterned magnetic tunnel crystal circle, and use method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] In order to make the invention, characteristics, advantages, the advantages of the present application can be more apparent, and the technical solutions in the present application embodiment will be described in connection with the drawings in the present application embodiment. The embodiment is merely the embodiment of the present application, and not all of the embodiments. Based on the embodiments in the present application, those skilled in the art will belong to all other embodiments obtained without making creative labor.

[0039] Those skilled in the art will appreciate that "first", "second" in this application use only for distinguishing different devices, modules or parameters, etc., neither represent any specific technical meanings, nor does it indicate the inevitability between them. Logical order.

[0040] Magnetic tunnels have an important role in information storage. like Figure 1-a As shown, the core portion of the magnetic tunnel junction is a sandwich str...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a magnetic resistance test structure of a patterned magnetic tunnel crystal circle, and a use method thereof, and relates to the field of magnetic resistance test of the patterned magnetic tunnel crystal circle. The magnetic resistance test structure comprises a magnetic tunnel junction through hole, a magnetic tunnel junction, a pad test point for testing and a lead. And the test structure and the product device are integrated in the same layout to jointly complete a tape-out process on the wafer to be operated. According to the structure, a magnetic tunnel junction is connected with an external test pad point position through a test lead by utilizing through holes with different intervals, the intervals of the through holes are screened and determined according to requirements, resistance measurement of a plurality of groups of magnetic tunnel junctions is carried out, and finally MR and RA values are obtained through fitting. In the testing process, the risk of measurement data distortion caused by device breakdown and the like in the testing process can be reduced, meanwhile, due to the arrangement and combination relation of the multiple testing point positions, more accurate fitting of required MR and RA values can be achieved, and accurate monitoring of core parameters such as the MR value in the graphical wafer preparation process is facilitated.

Description

Technical field [0001] The present invention relates to the field of magnetic electronic devices, in particular in the field of graphical magnetic tunnel crystalline circular magnetic resistance test. Background technique [0002] With the continuous upgrade of software and hardware performance of electronic equipment, the market is highly required for the storage density and storage speed of memory. The electronic devices of the process of 28 nm and the following process are often used for magnetic random memory (MRAM, MAGNETIC RANDOM Access Memory). Magnetic random memory preparation is the monitoring of core parameters of core structural magnetic tunnel junction (MTJ, Magnetic Tunnel Junction). Inline and OFFLINE monitoring for MR and RA values ​​are particularly important, two monitored objects respectively correspond to wafer and unprivified light sheets in the flow process. In the prior art, for MR and RA monitoring of wafer, that is, OFFLINE monitoring, general method is i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66H01L43/12H01L43/08H10N50/01H10N50/10
CPCH01L22/30H01L22/14H10N50/10H10N50/01
Inventor 吕术勤陈文静刘宏喜曹凯华王戈飞
Owner 致真存储(北京)科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com