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Manufacturing method of display device

A technology of display device and conductive film, applied in the field of display device and manufacturing display device

Inactive Publication Date: 2004-01-21
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But on the other hand, this technique can cause various problems as mentioned above

Method used

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  • Manufacturing method of display device
  • Manufacturing method of display device
  • Manufacturing method of display device

Examples

Experimental program
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Embodiment 1

[0043] This embodiment indicates a process in which, in a method of manufacturing an active matrix liquid crystal display device connected to a peripheral driver circuit, a thin anodic oxide film is partially formed on a peripheral driver circuit requiring high integration, and a thick anodized film for constituting the compensation gate The anodized film is formed in the pixel area where weak current-cutting characteristics are required.

[0044] Image 6 is a block diagram showing the structure of the active matrix liquid crystal display device of this embodiment. In the active matrix liquid crystal display device, each pixel arranged in a matrix form is arranged with a pixel thin film transistor (pixel TFT). The source driver circuit and the gate driver circuit are arranged as peripheral driver circuits for driving the pixel thin film transistors.

[0045] The pixel area and peripheral driver circuits are monolithically formed on the same glass substrate. The peripheral dr...

Embodiment 2

[0102] The feature of this embodiment is that the gap is also formed when the pixel gate line of the pixel thin film transistor is formed in the process of manufacturing the first embodiment. In the first embodiment, anodic oxidation is performed twice: the first anodic oxidation is to complete the gap part of the gate line in the peripheral driver circuit, and the second anodic oxidation is to complete the entire gate line in the pixel area.

[0103] In the manufacturing process of the first embodiment, an anodic oxide film is formed over the entire gate line constituting the pixel region. In this case, there is a possibility that unevenness may be generated in the thickness of the anodized film in a large pixel area due to the voltage drop of the gate line. This problem is important when trying to manufacture a large-area liquid crystal display device, such as a 40-inch type, or even larger than future advanced technology.

[0104] In view of the foregoing, the present embo...

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Abstract

In an active matrix liquid crystal display device, gate lines in thin-film integrated circuits constituted of thin-film transistors are formed with aluminum. In forming the gate lines, before patterning a starting film of the gate lines, slits are formed in regions where hillock and whiskers, if they should occur, would cause crosstalk or short-circuiting, and portions of the gate lines within the slits are anodized. Wiring lines are formed by utilizing the regions where the slits were formed. As a result, there can be solved problems that undesired stress would otherwise occur during anodization and that currents large enough for anodization could not be supplied due to a complex wiring pattern. Gate lines in a pixel area are subjected to a separate anodization step.

Description

[0001] Invention name [0002] The invention relates to a manufacturing method of an active matrix liquid crystal display device with an integrated circuit, and the integrated circuit adopts metal electrodes and metal wire lines. The present invention also relates to a display device in which a pixel area having a matrix structure and a drive circuit arranged in the pixel area for driving the switching elements are monolithically formed. technical background [0003] The existing active matrix liquid crystal display device is characterized in that in the pixel area, a plurality of pixels are arranged in many, many matrices, and each pixel is provided with a thin film transistor to control the electricity entering or outputting the pixel electrode. [0004] At present, a driving circuit for driving a thin film transistor arranged in a pixel area is constituted as an external integrated element circuit. An external integrated element circuit is formed on a single crystal wafer ...

Claims

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Application Information

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IPC IPC(8): G02F1/1343G02F1/136G02F1/1362G02F1/1368H01L29/786
CPCG02F1/136286G02F1/13454G02F2001/136295G02F1/136295
Inventor 小山润
Owner SEMICON ENERGY LAB CO LTD
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