Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solar cell and preparation method thereof

A technology of solar cells and electrodes, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as low open circuit voltage of solar cells

Pending Publication Date: 2021-10-22
宣城睿晖宣晟企业管理中心合伙企业(有限合伙)
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to overcome the problem of low open circuit voltage of solar cells in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar cell and preparation method thereof
  • Solar cell and preparation method thereof
  • Solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037]A solar cell, comprising: a semiconductor substrate layer; a first intrinsic amorphous silicon layer located on one side of the semiconductor substrate layer; a second intrinsic amorphous silicon layer located on the other side of the semiconductor substrate layer; The P-type semiconductor layer on the side of the crystalline silicon layer facing away from the semiconductor substrate layer; the N-type semiconductor layer on the side of the second intrinsic amorphous silicon layer facing away from the semiconductor substrate layer; the P-type semiconductor layer on the side facing away from the semiconductor substrate layer; The first transparent conductive layer on the side of the semiconductor substrate layer; the second transparent conductive layer on the side of the N-type semiconductor layer facing away from the semiconductor substrate layer; the second transparent conductive layer on the side of the first transparent conductive layer facing away from the semiconductor...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
angleaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a solar cell and a preparation method thereof. The solar cell comprises a semiconductor substrate layer; a first carrier collection film which is located on one side of the semiconductor substrate layer and comprises a first sub-collection film and a second sub-collection film which is located on one side, opposite to the semiconductor substrate layer, of the first sub-collection film, wherein the crystal orientation of the second sub-collection film is different from that of the first sub-collection film; and a first grid line electrode which is positioned on one side, opposite to the semiconductor substrate layer, of the first carrier collection film. The open-circuit voltage of the solar cell is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a solar cell and a preparation method thereof. Background technique [0002] Solar cells are a kind of clean energy cells, and solar cells are widely used in life and production. Heterojunction solar cell is an important solar cell. The structure of heterojunction (Hetero Junction with intrinsic Thinlayer, referred to as HJT) is between p-type hydrogenated amorphous silicon and n-type hydrogenated amorphous silicon and n-type silicon substrate. Adding a layer of intrinsic hydrogenated amorphous silicon thin film, after adopting this technological measure, changes the properties of PN junction, thus improving the conversion efficiency of heterojunction solar cells. In addition, heterojunction solar cells have the characteristics of good temperature coefficient, double-sided power generation, low process temperature, and high conversion efficiency. They are very competitive...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/0747H01L31/20
CPCH01L31/022475H01L31/0747H01L31/202Y02E10/50Y02P70/50
Inventor 不公告发明人
Owner 宣城睿晖宣晟企业管理中心合伙企业(有限合伙)
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com