Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor device

A semiconductor and device technology, applied in the field of semiconductor devices, can solve problems such as insufficient protection and permanent chip failure, and achieve the effects of good electrostatic discharge performance, strong electrostatic discharge capability, and small device area

Pending Publication Date: 2021-10-12
CHANGXIN MEMORY TECH INC
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The transient current in the electrostatic discharge process can reach several amperes or even tens of amperes. If the corresponding ESD protection measures are insufficient, it is easy to cause permanent failure of the chip.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046]In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. A preferred embodiment of the invention is shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.

[0047] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0048] In the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

The invention relates to a semiconductor device. The semiconductor device comprises: a doped well region of a first conductivity type; and M semiconductor units which are located in the doped well region of the first conduction type and arranged in the doped well region of the first conduction type in the first direction, wherein M is a positive integer. The semiconductor unit comprises a first doped region of the second conduction type and a doped region of the first conduction type, and the doped region of the first conduction type surrounds the first doped region of the second conduction type; the second doped region of the second conduction type is located on at least one side of the M semiconductor units along the first direction, and the second doped region of the second conduction type enables the whole edge of the M semiconductor units to form a region with low conduction voltage and high holding current, and therefore, even if the overall area of the semiconductor device is reduced, the classical release performance of the semiconductor device cannot be influenced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to semiconductor devices. Background technique [0002] Electrostatic discharge (ESD, Electrostatic Discharge) refers to the charge transfer that occurs when two objects with different charges come into contact with each other. As semiconductor process dimensions continue to shrink and face increasingly complex application environments, chips are increasingly threatened by electrostatic discharge (ESD) damage. The transient current in the electrostatic discharge process can reach several amperes or even tens of amperes. If the corresponding ESD protection measures are insufficient, it is easy to cause permanent failure of the chip. Contents of the invention [0003] Based on this, it is necessary to provide a semiconductor device to enhance the ESD protection capability of the chip for the above technical problems. [0004] The invention provides a semiconductor device, c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L29/06
CPCH01L27/0262H01L29/0603H01L29/0684H01L27/02H01L29/87H01L29/0692H01L29/7436
Inventor 刘志拯
Owner CHANGXIN MEMORY TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com