Semiconductor device and manufacturing method thereof

Abstract

The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate and a stack structure formed on the substrate. The substrate comprises a device area and a cutting channel area located on the periphery of the device area, and the stacking structure comprises a first stacking structure located in the device area and a second stacking structure located in the cutting channel area. A device channel extending in the direction perpendicular to the first stacking structure is formed in the first stacking structure, and a plurality of first reference channels extending in the direction perpendicular to the second stacking structure and penetrating through the second stacking structure are formed in the second stacking structure. The critical size of the device channel is smaller than that of the first reference channel. When electron beam detection is carried out on the semiconductor device, based on the voltage contrast characteristics presented by the device channel and the first reference channels, whether the device channel has the etching defect or not can be judged, the reason for the etching defect of the device channel can also be judged, the detection efficiency is high, and the influence on the productivity is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] In the manufacturing process of semiconductor devices, in order to ensure the production yield, it is necessary to detect etching defects on the trench after the entire trench process is completed. There are two types of etching defects in the channel: one is that the critical dimension of the channel is small, resulting in insufficient etching depth of the channel hole and not penetrating through the stacked structure of the semiconductor device, so that the channel does not have the substrate under the stacked structure contact; the other is that the critical dimension of the channel is large enough, and the channel hole formed by etching runs through the stack structure to the substrate, but there is etching gas residue in the channel hole, which causes the deposition material in th...

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Problems solved by technology

However, when the transmission electron microscope is used for detection, it not only takes a lot of time and cost, but also needs to stop the production line, which seriously affects the production capacity

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