Wafer cleaning and drying method and mechanism

Abstract

The invention discloses a wafer cleaning and drying method which comprises the following steps: a wafer enters a box body and is completely immersed in cleaning liquid, and the bottom of the wafer is supported and limited by a fixed supporting seat; a horizontal limiting mechanism vertically moves upwards to limit swinging of the wafer; a pushing mechanism vertically moves upwards by a first stroke to be in contact with the wafer, and the first stroke is the distance between the pushing mechanism and the wafer; the pushing mechanism drives the wafer to move upwards, the horizontal limiting mechanism moves upwards cooperatively and keeps a contact state with the wafer so as to limit inclination of the wafer, the wafer continuously moves upwards to extend out of the liquid level, and a spraying mechanism sprays dry gas to the wafer; when the horizontal limiting mechanism approaches the liquid level, the horizontal limiting mechanism stops moving upwards, and at the moment, the pushing mechanism keeps moving upwards, so that continuous upward movement of the wafer is ensured until the wafer is completely separated from the cleaning liquid. The invention further discloses a wafer cleaning and drying mechanism. The wafer is in contact with the bottom propelling mechanism from the beginning of ascending, it is ensured that the wafer is always stressed and continuously sent out, and the cleaning effect is ensured.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuit chip manufacturing, and in particular relates to a wafer cleaning and drying method and mechanism. Background technique [0002] Chemical mechanical planarization is a processing technology in integrated circuit technology. With the development of technology, the requirements for processing technology will increase accordingly. At the same time, chemical mechanical planarization is a wet process in the wafer processing process, and a large amount of polishing liquid and different chemical reagents will be used in the entire process. Therefore, At the end of the process, the wafer needs to be cleaned and dried to remove particles attached to the surface of the wafer, so that it can enter the next process. [0003] In the existing integrated circuit equipment, the traditional drying method is spin drying, which uses the centrifugal force generated at high speed to remove th...

AI Technical Summary

Problems solved by technology

At this time, if the positioning groove of the wafer is facing downward, the thimble structure must first complete the empty stroke generated by the part where the positioning groove is located, before continuing to push the wafer up, causing the wafer to stay, that is, causing the wafer to move. Discontinuous, which greatly affects the effect of the Marangoni effect, resulting in incomplete drying, and liquid still exists on the surface of the wafer

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