PVT method high-quality single crystal growth thermal field device and method

A high-quality, single-crystal technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve problems such as poor single crystal quality and seed crystal damage, achieve good crystal quality, reduce the generation of impurities in the crystal, The effect of improving quality

Pending Publication Date: 2021-09-03
哈尔滨科友半导体产业装备与技术研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The invention solves the problem that the current device and method for preparing single crystal by PVT method easily cause damage to the seed crystal and the quality of the prepared single crystal is poor

Method used

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  • PVT method high-quality single crystal growth thermal field device and method

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specific Embodiment approach 1

[0028] Specific implementation mode one: combine figure 1 Describe this embodiment, a PVT method high-quality bulk single crystal growth thermal field device in this embodiment, including graphite insulation material 2, crucible body 3, graphite cylinder 5, support structure 6, guide cylinder 7, seed crystal support 9 , support graphite cylinder 10, crucible cover 11 and disc 12, crucible body 3 is inverted, graphite cylinder 5 is installed in the crucible body 3 through support structure 6, crucible body 3 side walls, crucible body 3 bottom surfaces, graphite cylinder 5 outer walls and support The raw material placement area 4 is formed between the structures 6, and the raw materials are filled into the raw material placement area 4; the disc 12 is fixedly installed on the inner wall of the crucible body 3, and is located under the supporting structure 6, and the guide tube 7 is installed sequentially under the disc 12 And supporting graphite cylinder 10, crucible cover 11 is...

specific Embodiment approach 2

[0029] Specific implementation mode two: combination figure 1 Describe this embodiment, a PVT method high-quality bulk single crystal growth thermal field device of this embodiment, the upper end and the lower end of the graphite insulation material 2 are respectively provided with a temperature measurement window 1, which can be measured by measuring the temperature window 1 during the crystal preparation process The temperature window 1 measures the temperature of the upper and lower ends of the crucible in real time to prevent the crystal growth quality from being too high or too low.

specific Embodiment approach 3

[0030] Specific implementation mode three: combination figure 1 Describe this embodiment, a kind of PVT method high-quality single crystal growth thermal field device of this embodiment, described graphite tube 5 is loose porous structure, and the pore diameter of loose porous structure is smaller than the diameter of raw material particle, and the outer diameter of graphite tube 5 In the range of 30-150mm, the diameter of the graphite cylinder 5 surface is smaller than the particle diameter of the raw material to prevent the raw material from leaking from the graphite cylinder 5 before forming the gas phase. The graphite cylinder 5 can change the outer diameter correspondingly according to the thickness of the prepared crystal and the amount of raw material the size of.

[0031] Specific implementation mode four: combination figure 1 Describe this embodiment, a PVT method high-quality bulk single crystal growth thermal field device in this embodiment, the wall thickness of t...

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Abstract

The invention discloses a PVT method high-quality single crystal growth thermal field device and method, and belongs to the technical field of single crystal preparation. The invention solves the problems that the existing device and method for preparing the single crystal by the PVT method are easy to cause seed crystal damage and the prepared single crystal is poor in quality. A crucible body is inverted, a graphite cylinder is installed in the crucible body through a supporting structure, a raw material containing area is formed among the side wall of the crucible body, the bottom face of the crucible body, the outer wall of the graphite cylinder and the supporting structure, and the raw material containing area is filled with raw materials; a wafer is fixedly installed on the inner wall of the crucible body and located below the supporting structure, a guide cylinder and a supporting graphite cylinder are sequentially installed below the wafer, a crucible cover and the crucible body are installed in a matched mode, a seed crystal support is installed in the crucible cover, seed crystals are arranged in the crucible body through the seed crystal support, and the outer wall of the crucible body and the outer wall of the crucible cover are wrapped with graphite heat preservation materials. The crystal prepared by the single crystal growth device and method is high in quality, and the seed crystal is not easy to damage during preparation of the crystal.

Description

technical field [0001] The invention relates to a thermal field device and method for growing a high-quality bulk single crystal by PVT method, and belongs to the technical field of single crystal preparation. Background technique [0002] The third-generation semiconductor materials represented by silicon carbide and aluminum nitride are considered to have very broad prospects in emerging industries such as rail transit, new energy vehicles, smart grids, and 5G communications, while physical vapor transport (PVT) is the mainstream The preparation process is based on the principle that the gas phase components are gradually deposited on the seed crystal to achieve crystal growth. However, at present, the seed crystal is often fixed above the crucible, and the seed crystal is fixed by bonding or designing a specific structure. At present, this preparation method has the following defects: [0003] 1. The way of bonding seed crystals is fixed at high temperature. Due to the d...

Claims

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Application Information

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IPC IPC(8): C30B23/00C30B29/36C30B29/40
CPCC30B23/00C30B29/36C30B29/403
Inventor 不公告发明人
Owner 哈尔滨科友半导体产业装备与技术研究院有限公司
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