Curable film

Abstract

The purpose of the present invention is to provide: a curable film for forming an anti-warping layer on the reverse surface of a semiconductor package, the curable film being such that it is possible to form a cured product having a low linear expansion coefficient even when the inorganic filler content of the curable film is low, to effectively form a via, and to form an anti-warping layer in which scum is not readily produced after formation of the via; a semiconductor package provided with an anti-warping layer; and a method for producing the semiconductor package. This curable film is used for forming, on the reverse surface of a semiconductor package, an anti-warping layer that prevents warping of the semiconductor package, wherein: the curable film has a configuration in which pores in a porous sheet-form support, which comprises a material having a linear expansion coefficient of 20 ppm / K or less, are filled with a curable composition; and the glass transition temperature of a cured product of the curable film is 100 DEG C or less. This semiconductor package provided with an anti-warping layer has an anti-warping layer comprising a cured product of the curable film described above on the reverse surface of the semiconductor package.

Description

technical field [0001] The present invention relates to a curable film for forming a warpage prevention layer for preventing warpage of a semiconductor package on the back surface of a semiconductor package. This application claims the priority of Japanese Patent Application No. 2019-012596 for which it applied to Japan on January 28, 2019, and uses the content here. Background technique [0002] In recent years, semiconductor packages (hereinafter sometimes simply referred to as "packages") have become more functional in mounting technology, and it has been proposed that multiple types of semiconductor chips (hereinafter sometimes simply referred to as "chips") be mixed in the same package. A fan-out package (Fan-Out Package), a three-dimensional structure in which other packages are placed on the package. Therefore, the number of terminals has increased dramatically, and it is necessary to form wiring in a three-dimensional manner on the back side of the package in additi...

AI Technical Summary

Problems solved by technology

With the development of such packages with high functionality, there is a problem that the packages are prone to break down due to the stress caused by the difference in thermal expansion coefficient of various chips and the wiring that is formed complicatedly for three-dimensionally connecting them. Warpage, lower yield

In addition, there is also the following problem: with the improvement of the performance of electronic equipment, the amount of heat generated increases, and when the package is warped due to heat, poor connection will occur, which will affect the durability and reliability of electronic equipment. decreased sex

[0003] For the purpose of preventing the warpage of the package, various proposals have been made to provide a warpage prevention layer on the package, but in order to achieve sufficient warpage reduction, it is necessary to reduce the linear expansion coefficient of the warpage prevention layer, and This leads to a large increase in inorganic fillers such as metal oxides with a small linear expansion coefficient (see, for example, Patent Document 1)

However, when a large amount of inorganic filler is added to the warpage prevention layer, the flexibility decreases and the layer becomes hard and brittle. Therefore, there is a problem that the resistance to thermal shock is weakened and cracks are likely to occur.

Furthermore, when forming through electrodes (via holes) on the back side of the package, if a large amount of inorganic filler is blended in the warpage preventing layer, the speed of forming the via holes may decrease, or the inorganic filler may float after forming the via holes. The problem that the form of slag remains and causes a decrease in yield

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