Integrated wafer bow measurements

Abstract

In some examples, a wafer bow measurement system comprises a measurement unit including: a wafer support assembly to impart rotational movement to a measured wafer supported in the measurement unit; an optical sensor; a calibration standard to calibrate the optical sensor; a linear stage actuator to impart linear direction of movement to the optical sensor; a wafer centering sensor to determine a centering of the measured wafer supported in the measurement unit; and a wafer alignment sensor to determine an alignment of the measured wafer supported in the measurement unit.

Description

[0001] priority claim [0002] This application claims priority to U.S. Patent Application No. 62 / 796,963, filed January 25, 2019, by Arora et al., entitled "Integrated WaferBow Measurements," which is hereby incorporated by reference in its entirety. technical field [0003] The subject matter disclosed herein relates to devices used in semiconductor and related industries. More specifically, the present disclosure relates to integrated wafer warp measurement, and in one example, wafer warp measurement using optical sensors. Background technique [0004] The background description provided herein is for the purpose of generally presenting the context of the disclosure. The work of the presently named inventors is neither expressly nor impliedly admitted to be prior art to the present disclosure to the extent that it is described in this Background section and in aspects of the specification that cannot be determined to be prior art at the time of filing. technology. [0...

AI Technical Summary

Problems solved by technology

[0012] Current stand-alone technologies are either limited by TpT (wafer to point-by-point measurement) or have <300 micron measurement range, making them unsuitable for process control

Also, stand-alone systems are not designed to measure hot wafers and are therefore not suitable for real-time measurements

For example, in some cases wafer warp compensation can be performed by depositing a film on the backside of a warped wafer using a deposition tool, but this does not provide sufficient warp compensation in real-time in high-volume manufacturing

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