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Photovoltaic mercury cadmium telluride infrared detector and preparation method thereof

An infrared detector, mercury cadmium telluride technology, applied in the field of infrared detection, can solve problems such as unfavorable infrared detector sensitivity, achieve the effect of improving device sensitivity and increasing the number of electrons

Active Publication Date: 2021-08-24
INFORMATION SCI RES INST OF CETC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the photoelectric conversion efficiency (External Quantum Efficiency, EQE) of mercury cadmium telluride-based photovoltaic infrared detectors is usually less than 100%, which does not use to further improve the sensitivity of infrared detectors.

Method used

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  • Photovoltaic mercury cadmium telluride infrared detector and preparation method thereof
  • Photovoltaic mercury cadmium telluride infrared detector and preparation method thereof
  • Photovoltaic mercury cadmium telluride infrared detector and preparation method thereof

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Embodiment Construction

[0041] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0042] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...

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Abstract

The invention relates to the technical field of infrared detection, and particularly discloses a photovoltaic mercury cadmium telluride infrared detector and a preparation method thereof. The detector comprises a substrate; a first absorption layer formed on the substrate; a second absorption layer formed on the first absorption layer; a photoelectric gain function layer formed on the second absorption layer; a passivation layer; an upper electrode which covers the upper electrode window; and a lower electrode which covers the lower electrode window. The detector comprises a photoelectric gain functional layer, photogenerated electrons are captured through interface traps, a coulomb field is generated, interface energy band bending is induced, tunneling injection of holes from an external circuit (namely quantum tunneling induced by the interface traps) is enhanced, the number of electrons flowing through the device in unit time is greatly increased, the photoelectric conversion efficiency (EQE) of the device is larger than 100%, and the device sensitivity of the photovoltaic mercury cadmium telluride infrared detector is improved.

Description

technical field [0001] The invention relates to the technical field of infrared detection, and specifically discloses a photovoltaic type mercury cadmium telluride infrared detector and a preparation method thereof. Background technique [0002] Infrared detection is recognized as a vital sensor technology. Infrared detector (Infrared Detector) is a device that converts incident infrared radiation energy into electrical signal output. It is widely used in military, industrial production, commercial markets and other fields, especially in early warning, national defense and security. effect. In the application of infrared spectroscopy, mercury cadmium telluride (HgCdTe), a narrow bandgap semiconductor material, is a well-developed and mature material system, and has become one of the most preferred infrared detector materials. [0003] In the middle of the last century, photoconductive mercury cadmium telluride infrared detectors have received great attention and developmen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/109H01L31/0216H01L31/18
CPCH01L31/109H01L31/02161H01L31/1832Y02P70/50
Inventor 苗建利张芳沛张国亮
Owner INFORMATION SCI RES INST OF CETC
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