Ultrahigh-voltage insulated isolation IGBT half-bridge gate driving circuit

Abstract

The invention relates to an ultrahigh-voltage insulated isolation IGBT half-bridge gate driving circuit required by gate driving of a high-voltage IGBT device. The circuit comprises an input receiving circuit, a dead time generating circuit, a low-side delay circuit, a low-side output driving circuit, a modulation transmitting circuit, four high-voltage capacitors, a high-common-mode transient suppression differential signal receiving circuit, a high-side output driving circuit, a transmitting end low-voltage generating circuit and a receiving end low-voltage generating circuit. According to the ultrahigh-voltage insulation isolation SiC MOSFET gate driving circuit provided by the invention, on one hand, an ultrahigh voltage-resistant insulation capacitance can be realized by adopting a high-voltage insulation isolation technology; and on the other hand, the magnitude of the ground potential common-mode transient noise can be automatically detected, and the error generated by the common-mode transient noise is dynamically compensated when the noise exceeds a threshold value. The circuit can be widely applied to driving various high-voltage power devices.

Description

Technical field [0001] The present invention relates to an ultra-high pressure insulating IGBT semi-high pressure insulating IGBT half-bridge gate driving circuit for a power electronics, which belongs to the technical field of integrated circuits. Background technique [0002] Entering the 21st century, under the traction of the emerging industries such as smart grid, mobile communication, and new energy vehicles, power electronic application systems require further improvement of the efficiency, miniaturization and increased function of the system, special requirements for circuit applications in size, quality, power and efficiency. The trade-off between servers, battery charger, and solar electric field micro-inverters. The above application requires that the power electronics system has a high power density while design efficiency is 95% (> 500w / in 3 30.5W / cm 3 ), High ratio power (10kW / pound, 22 kW / kg) and high-headed load points (> 1000w). With the continuous ...

AI Technical Summary

Problems solved by technology

The size of VH directly determines the electrical isolation level inside the chip, and to realize different levels of electrical isolation functional modules inside the chip, there are large differences in the circuit device technology and cost quality level required.

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