Energy-saving crystal growth single crystal furnace equipment and use method thereof

Abstract

The invention discloses energy-saving crystal growth single crystal furnace equipment. The single crystal furnace equipment comprises a bracket, a growth furnace is arranged on the bracket, the growth furnace comprises a lower furnace body fixed on the bracket, an upper furnace cover is arranged above the lower furnace body, a lower furnace cover is arranged below the lower furnace body in a sliding manner, and an upper furnace body is fixed above the upper furnace cover. A first control mechanism for controlling opening and closing of the lower furnace cover is fixed on the bracket, and a second control mechanism for controlling opening and closing of the upper furnace cover is arranged on the bracket. A graphite tray is arranged in the growth furnace, and a quartz crucible is placed in the graphite tray. A third control mechanism for controlling the lifting rotation of the graphite tray is arranged on the lower furnace cover, a seed crystal clamp is arranged in the lower furnace body, and a fourth control mechanism for controlling the lifting rotation of the seed crystal clamp is fixed on the upper furnace body. According to the single crystal furnace equipment, the lower furnace cover is arranged, so that the problem that a quartz crucible of a traditional growth furnace is inconvenient to take out is solved; and the cooling cavity is arranged, so that the cooling speed is increased, and the crystal growth efficiency and the yield of silicon crystals are improved.

Description

technical field [0001] The invention relates to a single crystal furnace equipment, in particular to an energy-saving crystal growth single crystal furnace equipment and a using method thereof. Background technique [0002] The growth of semiconductor single crystal silicon mainly adopts the Czochralski method (Czochralski method, referred to as Cz method). In this method, polycrystalline silicon is put into a quartz crucible, heated and melted, and then the temperature of the silicon melt is slightly lowered to give a certain degree of supercooling, and a silicon single crystal (seed crystal) in a specific radial direction is combined with the silicon melt. Body contact, by adjusting the temperature of the melt and the upward lifting rate of the seed crystal, when the seed crystal grows to a diameter close to the target, increase the pulling rate to make the crystal grow with a nearly constant diameter. At the end of the growth process, when there is still silicon melt in ...

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide an energy-saving crystal growth single crystal furnace device and its use method. By setting the lower furnace cover, the problem of inconvenient removal of the quartz crucible of the traditional growth furnace is solved, and by setting the cooling chamber, the cooling is accelerated. The speed improves the crystal growth efficiency and the output of silicon crystals. By installing a wind power generation device on one side of the outlet pipe, the steam generated by cooling blows the windmill of the wind power generation device to rotate and store electrical energy.

Images