Silicon wafer texturing process

A silicon wafer and process technology, applied in the field of silicon wafer texturing process, can solve the problems of reducing production line efficiency, affecting the straight-through rate of production line silicon wafers, silicon wafer white spots, etc., and achieve the effect of reducing the defective rate

Active Publication Date: 2021-07-02
CHANGZHOU SHICHUANG ENERGY CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the texturing process on the market is still a traditional wet process. After the texturing is completed, problems such as white spots and bright spots will appear on the silicon wafer with a high probability, which seriously affects the throughput rate of silicon wafers in the production line and reduces the production line. Production line efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] 1) 1200 pieces of silicon wafers enter the chain oxidation furnace for high temperature oxidation treatment, the temperature is 700 °C, and the time is 180s;

[0034] 2) 1200 pieces of silicon wafers processed in step 1) enter the pickling area of ​​the first chain pickling machine for 5 minutes of normal temperature pickling. The acid solution used for pickling is prepared from 5wt% HF and 95wt% deionized water;

[0035] 3) The 1200 pieces of silicon wafers after step 2) enter the rinsing area of ​​the first chain pickling machine for 6 minutes of normal temperature rinsing;

[0036] 4) The 1200 pieces of silicon wafers processed in step 3) are inserted into the oxidation tank by the first inserting machine for oxidation treatment. 2 o 2 , 2wt% NaOH, 93wt% deionized water;

[0037] 5) 1200 pieces of silicon wafers processed in step 4) enter the first clear water tank for rinsing at room temperature for 3 minutes;

[0038] 6) The 1200 pieces of silicon wafers process...

Embodiment 2

[0045] 1) 1200 pieces of silicon wafers enter the chain oxidation furnace for high temperature oxidation treatment, the temperature is 500 °C, and the time is 200s;

[0046] 2) 1200 pieces of silicon wafers processed in step 1) enter the pickling area of ​​the first chain pickling machine for 3 minutes of normal temperature pickling. The acid solution used for pickling is prepared from 7wt% HF and 93wt% deionized water;

[0047] 3) The 1200 pieces of silicon wafers after step 2) enter the rinsing area of ​​the first chain pickling machine for 5 minutes of normal temperature rinsing;

[0048] 4) The 1200 pieces of silicon wafers processed in step 3) are inserted into the oxidation tank by the first inserting machine for oxidation treatment. 2 o 2 , 2wt% NaOH, 93wt% deionized water;

[0049] 5) 1200 pieces of silicon wafers processed in step 4) enter the first clear water tank for rinsing at room temperature for 3 minutes;

[0050] 6) The 1200 pieces of silicon wafers processed...

Embodiment 3

[0057] 1) 1200 pieces of silicon wafers enter the chain oxidation furnace for high temperature oxidation treatment, the temperature is 300 °C, and the time is 240s;

[0058] 2) 1200 pieces of silicon wafers after step 1) enter the pickling area of ​​the first chain pickling machine for 2min30s pickling at room temperature. The acid solution used for pickling is prepared from 9wt% HF and 91wt% deionized water;

[0059] 3) The 1200 pieces of silicon wafers after step 2) enter the rinsing area of ​​the first chain pickling machine for 3 minutes of normal temperature rinsing;

[0060] 4) The 1200 pieces of silicon wafers processed in step 3) are inserted into the oxidation tank by the first inserting machine for oxidation treatment. The time is 2 minutes, the temperature is 60 °C, and the oxidation treatment solution in the oxidation tank is composed of 6wt% H 2 o 2 , 3wt% NaOH, 91wt% deionized water;

[0061] 5) 1200 pieces of silicon wafers processed in step 4) enter the first...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The present invention discloses a silicon wafer texturing process. Before texturing, the silicon wafer is subjected to high-temperature treatment, so that organic dirt on the surface of the silicon wafer is decomposed, the organic dirt on the surface of the silicon wafer can be completely removed, and the problems of white spots, bright spots and the like in texturing due to the fact that the organic dirt is left on the surface of the silicon wafer can be avoided.

Description

technical field [0001] The invention relates to a silicon chip texturing process. Background technique [0002] Photovoltaic power generation is the most important part of solar energy utilization. It is an environmentally friendly and inexhaustible renewable energy that meets the pursuit of high efficiency and low cost in the photovoltaic industry. For monocrystalline silicon cells, the surface reflectance is one of the important factors affecting the efficiency conversion of solar cells. In order to reduce the surface reflectance, the texturing process plays an important role. [0003] The purpose of texturing is to create a texture on the surface of the original silicon wafer to achieve light trapping, thereby increasing the absorption rate of sunlight, thereby increasing the photoelectric conversion rate of the battery. At present, the texturing process on the market is still a traditional wet process. After the texturing is completed, problems such as white spots and b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0236
CPCH01L31/1804H01L31/02363Y02P70/50
Inventor 邓舜马琦雯
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap