A substrate processing apparatus

Abstract

Embodiments of the inventive concept provide a substrate processing apparatus. The substrate treating apparatus comprises a process treating unit providing a treating space performed treating the substrate; a plasma generating unit generating the plasma discharging a process gas, and supplying the plasma to the treating space. The plasma generating unit provides a plasma chamber having a generating space of the plasma; an antenna wound to surround the plasma chamber outside the plasma chamber; a first coating film covering inside walls of the plasma chamber and comprising yttrium fluoride (YF3).

Description

technical field [0001] Embodiments of the inventive concept described herein relate to a substrate processing apparatus, more particularly, to a substrate processing apparatus using plasma. Background technique [0002] Plasma corresponds to ionized gas, which contains ions, free radicals, electrons, and the like. Plasma is generated by very high temperature, strong electric field or radio frequency electromagnetic field (RF electromagnetic field). In order to manufacture semiconductor devices, various processes such as ashing or etching are performed using plasma to remove thin films on the substrate. The film on the substrate is ashed or etched by physical collision or chemical reaction with ions and radical particles contained in the plasma. [0003] Generally, plasma is generated in a chamber. Process gases are supplied into the chamber. The process gas supplied into the chamber is excited into plasma by the electromagnetic field generated in the chamber. The plasma...

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Also, collisions in ICP devices are more frequent than in CCP devices

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