Welding method of semiconductor device and semiconductor device

Abstract

The invention provides a welding method of a semiconductor device and a semiconductor device, and belongs to the technical field of semiconductor device preparation. The welding method comprises the following steps that a groove structure is set: a plurality of first grooves which extend along a first direction and are arranged at intervals along a second direction are formed on the surface of a first device; a solder is deposited; a solder structure is deposited on the surface of the first device, a plurality of protruding parts which extend in the first direction and are arranged at intervals in the second direction are formed on the surface of the solder structure, and the heights of the protruding parts are gradually reduced from the middle of the first device to the two sides of the first device in the second direction; the first device and a second device are welded; and the second device is placed on the solder structure, and the solder is heated, so that the second device can be soldered with the first device. In the welding process, the gaps between the adjacent protruding parts and the gap between the top faces of the protruding parts with the lower height and the second device can serve as exhaust channels, so that gas in the welding process is exhausted to the outside, cavities generated in a welded welding flux layer are reduced, and the void rate is reduced.

Description

Technical field [0001] The present invention relates to the field of preparation of semiconductor devices, and more particularly to a welding method of a semiconductor device and a semiconductor device. Background technique [0002] In the technical field of the semiconductor device, it is often encountered in the case of welding two devices. The quality of welding technology directly affects product quality and packaging efficiency. In some soldering, in order to improve production efficiency, it will be in one of them. The surface is first set, and then another device is placed above the solder and welded by heating. [0003] In the prior art, the gas generated by the solder and the air between the solder and the air between the devices are easily formed in the solder layer, and the contact area between the devices is large, so that the generated air bubble cannot be discharged smoothly, welded cavity High rate, reduce welding quality. Inventive content [0004] It is an objec...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a welding method for semiconductor devices and semiconductor devices, so as to alleviate the technical problems that the air bubbles cannot be smoothly discharged during the welding process of the existing semiconductor devices, the welding void rate is high, and the welding quality is reduced.

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