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SAW-BAW hybrid resonator

A SAW-BAW, hybrid resonator technology, applied in electrical components, impedance networks, etc., can solve the problem of high cost, achieve the effect of high Q value, structural optimization design suppression, and excellent performance

Pending Publication Date: 2021-06-11
SHANGHAI NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the defects of high cost of existing SAW / BAW hybrid resonators, and provide a SAW-BAW hybrid resonator with low cost and excellent performance (high frequency, high sound velocity, high Q value)

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] A SAW-BAW hybrid resonator, such as figure 1 with 2 As shown, it includes a first electrode layer 1, a first piezoelectric film layer 2, a second piezoelectric film layer 3, a second electrode layer 4 and a substrate layer 6 arranged in sequence;

[0053] The orthographic projection of the first electrode layer 1 and the first piezoelectric film layer 2 on the substrate layer 6 coincides, the second piezoelectric film layer 3 coincides with the orthographic projection of the second electrode layer 4 on the substrate layer 6, and the first electrode layer The orthographic projection of 1 on the substrate layer 6 is located within the orthographic projection of the second electrode layer 4 on the substrate layer 6, and the overall periodic and equidistant arrangement of the first electrode layer 1 and the first piezoelectric thin film layer 2 Two piezoelectric film layers 3;

[0054] The material of the first electrode layer 1 and the second electrode layer 4 is Pt, and...

Embodiment 2

[0059] A SAW-BAW hybrid resonator, such as image 3 As shown, its structure is basically the same as that of Embodiment 1, the difference is that it also includes a low acoustic impedance layer 51 located between the second electrode layer 4 and the substrate layer 6, and the low acoustic impedance layer 51 is SiO 2 film, SiO 2 The normalized thickness of the membrane h SiO2 Satisfy the following relationship: 0.1λ≤h SiO2 ≤λ.

Embodiment 3

[0061] A SAW-BAW hybrid resonator, such as Figure 4 As shown, its structure is basically the same as that of Embodiment 1, except that it also includes an acoustic reflective layer 5 located between the second electrode layer 4 and the substrate layer 6;

[0062] The acoustic reflection layer 5 includes a low acoustic impedance layer 51 and a high acoustic impedance layer 52 (the sound velocity of the low acoustic impedance layer is less than that of the high acoustic impedance layer), and the low acoustic impedance layer 51 is closer to the second electrode than the high acoustic impedance layer 52 Layer 4;

[0063] The low acoustic impedance layer 51 is SiO 2 film, SiO 2 The normalized thickness of the membrane h SiO2 Satisfy the following relationship: 0.1λ≤h SiO2 ≤λ;

[0064] The high acoustic impedance layer 52 is an AlN film, and the standardized thickness h of the AlN film is AlN Satisfy the following relationship: 0.1λ≤h AlN ≤λ.

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Abstract

The invention discloses an SAW-BAW hybrid resonator. The SAW-BAW hybrid resonator comprises a first electrode layer, a first piezoelectric film layer, a second piezoelectric film layer, a second electrode layer and a substrate layer which are arranged in sequence, the orthographic projection of the first electrode layer and the orthographic projection of the first piezoelectric film layer on the substrate layer coincide, and the orthographic projection of the second piezoelectric film layer and the orthographic projection of the second electrode layer on the substrate layer coincide; the whole body formed by the first electrode layer and the first piezoelectric film layer is periodically arranged on the second piezoelectric film layer at equal intervals; the piezoelectric coupling constant of the second piezoelectric thin film layer is lower than that of the first piezoelectric thin film layer, and the acoustic impedance of the second piezoelectric thin film layer is higher than that of the first piezoelectric thin film layer. The SAW-BAW hybrid resonator provided by the invention can have the excellent characteristics of high frequency, high K2, high Q value and the like by utilizing a Sixhu wave mode; not only can clutter response caused by Rayleigh waves and bulk waves be effectively suppressed, but also the structure is simple, the manufacturing difficulty and the production cost of the device are reduced, and the device has great application prospects.

Description

technical field [0001] The invention belongs to the technical field of piezoelectric micro-acoustic devices, and relates to a SAW-BAW hybrid resonator (surface acoustic wave and bulk acoustic wave micro-acoustic hybrid device), in particular to a SAW suitable for high-frequency broadband micro-acoustic filters of mobile communication radio frequency front ends -BAW hybrid resonators. Background technique [0002] With the rapid development of mobile communication systems, piezoelectric microacoustic devices, as the core components of filters, have been widely used in mobile communication equipment. In order to enable current smart terminal devices to work in different countries, it is necessary to support mobile communication standards (UMTS, HSPA, LTE, etc.) in more than 40 frequency bands. In particular, the arrival of the fifth-generation mobile communication technology (5th-Generation, 5G) era will promote the comprehensive upgrade of the terminal radio frequency system...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02H03H9/64
CPCH03H9/02H03H9/64
Inventor 张巧珍刘会灵赵祥永陈正林
Owner SHANGHAI NORMAL UNIVERSITY
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