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A kind of thin-film lithium niobate electro-optic modulator and preparation method thereof

An electro-optic modulator and lithium niobate technology, which is applied in the fields of instruments, optics, nonlinear optics, etc., can solve the problems of high loss of thin-film lithium niobate modulators, high manufacturing process requirements, and large driving voltage, so as to avoid microwave loss , increase the overlapping area, reduce the effect of preparation cost

Active Publication Date: 2022-07-19
ZHEJIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the problems existing in the background technology, the present invention proposes a thin-film lithium niobate electro-optic modulator based on an alumina substrate and its preparation method, which effectively solves the problem of high preparation process requirements, great difficulty, and the preparation of thin-film lithium niobate Lithium modulator has high loss, high driving voltage and small bandwidth

Method used

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  • A kind of thin-film lithium niobate electro-optic modulator and preparation method thereof
  • A kind of thin-film lithium niobate electro-optic modulator and preparation method thereof
  • A kind of thin-film lithium niobate electro-optic modulator and preparation method thereof

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Embodiment 1

[0066] like Figure 8 As shown, this embodiment includes a substrate 1, a buried oxide layer 2, a polymer layer 3 and an optical waveguide layer 4 arranged in sequence from bottom to top, [that is, the buried oxide layer 2 is placed on the substrate 1, and the polymer layer 3 is placed on the substrate 1. On the buried oxide layer 2 , the optical waveguide layer 4 is placed on the polymer layer 3 . 】

[0067] A metal signal electrode 6 and a metal ground electrode 7 are arranged on the optical waveguide layer 4, [the metal signal electrode 6 and the metal ground electrode 7 are placed on the optical waveguide layer 4;] the bottom surface of the optical waveguide layer 4 is arranged to form a 1*2 beam splitter 8, Mach-Zehnder modulator 9 and 2*1 beam combiner 10, 1*2 beam splitter 8 and 2*1 beam combiner 10 are located on both sides of Mach-Zehnder modulator 9, and 1*2 beam splitter The two output ends of the beam splitter 8 are connected through the Mach-Zehnder modulator 9 ...

Embodiment 2

[0084] like Figure 9 As shown, this embodiment includes a substrate 1, a buried oxide layer 2, a polymer layer 3 and an optical waveguide layer 4 arranged in sequence from bottom to top, [that is, the buried oxide layer 2 is placed on the substrate 1, and the polymer layer 3 is placed on the substrate 1. On the buried oxide layer 2 , the optical waveguide layer 4 is placed on the polymer layer 3 . 】

[0085] A metal signal electrode 6 and a metal ground electrode 7 are arranged in the polymer layer 3 under the optical waveguide layer 4. [The metal signal electrode 6 and the metal ground electrode 7 are placed on the optical waveguide layer 4 and the polymer layer 4 below the Between layers;] 4 bottom surfaces on the optical waveguide layer are arranged to form 1*2 beam splitter 8, Mach-Zehnder modulator 9 and 2*1 beam combiner 10, 1*2 beam splitter 8 and 2*1 beam combiner 10 is located on both sides of the Mach-Zehnder modulator 9, and the two output ends of the 1*2 beam sp...

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Abstract

The invention discloses a thin-film lithium niobate electro-optic modulator and a preparation method thereof. It includes a substrate, a buried oxide layer, a polymer layer and an optical waveguide layer arranged in sequence from bottom to top, and a metal signal electrode and a metal ground electrode are arranged on the optical waveguide layer or in the polymer layer below the optical waveguide layer, and the optical waveguide The bottom surface of the layer is arranged to form a 1*2 beam splitter, a Mach-Zehnder modulator and a 2*1 beam combiner. The 1*2 beam splitter and the 2*1 beam combiner are located on both sides of the Mach-Zehnder modulator, and 1 The two outputs of the *2 beam splitter are connected via the Mach-Zehnder modulator and the two inputs of the 2*1 beam combiner. The invention avoids the microwave loss caused by the substrate in the process, reduces the difficulty of the process, improves the modulation efficiency, realizes ultra-large bandwidth, low loss, and realizes a compact and ultra-high-performance electro-optic modulator.

Description

technical field [0001] The invention relates to an electro-optical modulator and a preparation method thereof in the technical fields of optical communication, optical interconnection and optical sensing, in particular to a thin-film lithium niobate electro-optical modulator based on an alumina substrate and a preparation method thereof. Background technique [0002] In the era of rapid development of informatization, the continuous development of new informatization technologies such as cloud computing, 5G, and big data has prompted a strong demand for high-speed, low-power, and large-capacity data processing and transmission technologies. With its advantages of small size, low energy consumption, and large bandwidth, integrated optics have gained more and more favor in the fields of optical interconnection, optical communication and optical sensing. In particular, the advantages of silicon-based optoelectronics being compatible with the CMOS process in integrated circuits ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/035G02F1/03
CPCG02F1/035G02F1/0316G02F1/0305
Inventor 刘柳陈耿鑫阮子良薛煜
Owner ZHEJIANG UNIV
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