Composite material, preparation method thereof and quantum dot light-emitting diode

A technology of quantum dot luminescence and composite materials, which is applied in the field of composite materials and its preparation, quantum dot light-emitting diodes, can solve the problems of unsatisfactory carrier transport performance, etc., and achieve the advantages of electron transmission, surface defect reduction, and uniformity scattered effect

Active Publication Date: 2021-03-23
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a composite material and its preparation method and a quantum dot light-emitting diode, aiming to solve the technical problem of unsatisfactory carrier transport properties of the existing metal compounds used as carrier transport materials

Method used

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  • Composite material, preparation method thereof and quantum dot light-emitting diode
  • Composite material, preparation method thereof and quantum dot light-emitting diode
  • Composite material, preparation method thereof and quantum dot light-emitting diode

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preparation example Construction

[0037] On the other hand, the embodiment of the present invention also provides a method for preparing a composite material, such as figure 1 Shown, this preparation method comprises the steps:

[0038] S01: providing metal compound nanoparticles and a polymer having a structure such as formula I;

[0039] S02: dissolving the metal compound nanoparticles and the polymer in an organic solvent to obtain a mixed solution;

[0040] S03: heat-treating the mixed solution, and then separating the solid and liquid to obtain the composite material.

[0041] The preparation method of the composite material provided by the embodiment of the present invention directly dissolves the metal compound nanoparticles and the polymer having the structure of formula I in an organic solvent and heats them, and then separates the solid and liquid to obtain the composite material, which has the advantages of simple process and low cost Features, suitable for large-scale, large-scale preparation, th...

Embodiment 1

[0078] The following uses zinc acetate, ethanol, potassium hydroxide, tetrahydrofuran (THF), 2,5-dibromo-3-hexylthiophene, and 2,5-dibromopyridine as examples for a detailed introduction.

[0079] 1) First, an appropriate amount of zinc acetate is added to 50ml of ethanol and stirred and dissolved at 70°C to form a zinc acetate solution with a total concentration of 0.5M. Then, potassium hydroxide was dissolved in 10ml of ethanol to obtain lye. mole ratio OH - : Zn 2+ =2:1 Mix the two to obtain a mixed solution with pH=12. Stirring was continued at 70 °C for 4 h to obtain a homogeneous transparent solution. Subsequently, after the solution was cooled, it was precipitated with ethyl acetate, and after centrifugation, it was dissolved with a small amount of ethanol, and the steps of precipitation and dissolution were repeated three times, followed by drying to obtain ZnO nanoparticles.

[0080] 2) Take an appropriate amount of 2,5-dibromo-3-hexylthiophene in 20ml of tetrahyd...

Embodiment 2

[0084] The following takes zinc nitrate, methanol, potassium sulfide, dimethylformamide (DMF), 2,5-dibromo-thiophene, and 2,5-dibromopyridine as examples for a detailed introduction.

[0085] 1) First, an appropriate amount of zinc nitrate was added to 50ml of methanol and stirred and dissolved at 60°C to form a zinc nitrate solution with a total concentration of 0.8M. Potassium sulfide was dissolved in 10ml of methanol to obtain lye. Massive S 2- : Zn 2+ =1.3:1, the two are mixed to obtain a mixed solution. Stirring was continued at 60 °C for 4 h to obtain a homogeneous solution. Subsequently, after the solution was cooled, it was precipitated with ethyl acetate, and after centrifugation, it was dissolved with a small amount of methanol, and the steps of precipitation and dissolution were repeated three times, followed by drying to obtain ZnS nanoparticles.

[0086] 2) Take an appropriate amount of 2,5-dibromo-thiophene in 20ml of dimethylformamide (DMF) to form a solutio...

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Abstract

The invention belongs to the technical field of nano materials, and relates to a composite material, a preparation method thereof and a quantum dot light-emitting diode. The composite material comprises metal compound nanoparticles and a polymer which is dispersed among the metal compound nanoparticles and has a structure as shown in a formula I in the specification. The polymer with a small bandgap is doped in the metal compound nanoparticles, so that electrons of the composite material are excited from a valence band to a conduction band more easily, the carrier concentration is increased,and electron transmission is facilitated; by means of the coating modification of the polymer, the surface defects of the metal compound nanoparticles are reduced, therefore, capture of carriers by the surface defects is inhibited, the carrier transmission performance of an inner core is further improved The composite material is used for a quantum dot light-emitting diode, so that the light emitting efficiency and performance of a device can be remarkably improved.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a composite material, a preparation method thereof and a quantum dot light-emitting diode. Background technique [0002] Semiconductor quantum dots (Quantum Dots, QDs) have a quantum size effect. People can adjust the size of quantum dots to achieve the required specific wavelength of light. The emission wavelength of CdSe QDs can be tuned from blue light to red light. In traditional inorganic electroluminescent devices, electrons and holes are injected from the cathode and anode respectively, and then recombine in the light-emitting layer to form excitons to emit light. Conduction-band electrons in wide-bandgap semiconductors can be accelerated under high electric field to obtain high enough energy and injected into QDs to make them emit light. [0003] In recent years, the use of inorganic semiconductors as electron transport layers has become a relativ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56C08L65/00C08K3/22C08K3/30
CPCC08K3/22C08K3/30C08K2201/011C08K2003/2296C08K2003/3036C08K2003/2293C08L2203/20H10K50/115H10K50/15H10K50/16H10K71/00C08L65/00
Inventor 何斯纳吴龙佳吴劲衡
Owner TCL CORPORATION
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