Inductively coupled plasma processing apparatus and ignition control method thereof

Abstract

The invention discloses an ignition control method of an inductively coupled plasma processing device. The device is provided with a vacuum processing cavity, a radio frequency power source and a biaspower source, and the radio frequency power source couples a radio frequency signal into the vacuum processing cavity through an inductive coupling coil. The bias power source applies a bias voltagesignal to a base in the vacuum processing cavity through a radio frequency matching network, and the base is used for supporting a substrate to be processed. The method comprises the steps of obtaining a control instruction; and by the bias power source, executing the control instruction to generate a bias voltage signal, wherein the bias voltage signal is a pulse voltage and is used for carryingout plasma ignition together with the radio frequency signal. By applying the method provided by the invention, the starting time of the radio frequency power source and the bias power source is controlled, and the duty ratio and the voltage of the pulse voltage of the bias power source are adjusted, so that the uniform acceleration of the plasma can be realized while the high-efficiency ignitionis realized.

Description

technical field [0001] The invention relates to the technical field of plasma processing, and more specifically, relates to an inductively coupled plasma processing device and an ignition control method thereof. Background technique [0002] In a plasma processing apparatus, an RF power supply supplies power to a process chamber to generate a plasma. Plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. These active particles interact with the wafer or workpiece to be processed placed in the chamber and exposed to the plasma environment. Plasma reaction occurs on the surface to change the surface properties of the wafer or workpiece, thereby completing plasma etching or other processes. [0003] In the above plasma processing device, the inductively coupled plasma (ICP) processing device provides an induction coil outside the processing device, and utilizes the induction coil to couple radio frequency power i...

AI Technical Summary

Problems solved by technology

However, the reduction of capacitive coupling makes it difficult to ignite the plasma under the conditions of generating low-pressure and low-density plasma

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