Wafer cutting method

Abstract

The invention discloses a wafer cutting method. When a cutting unit performs circular cutting on the wafer, a thermal module is arranged under the wafer, and the thermal module and the cutting head are respectively placed on both sides of the wafer; During the cutting process, it can sense the temperature change of the cutting area in real time, and transmit the signal to the signal processing unit. The signal processing unit transmits the thermal signal to the data processing unit, and the data processing unit controls the cutting head through the feedback signal loop. , Precisely control the cutting volume.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a wafer cutting method. Background technique [0002] With the rapid development of IC technology, the requirements for the integration, speed and reliability of the chip are getting higher and higher, which requires the chip to be smaller and thinner. At the same time, in order to reduce the production cost of a single chip and consider better product performance control, more and more chip types have begun to use 12-inch silicon wafers for production. [0003] The typical processes of 12-inch wafer backside thinning technology in the field of power devices are TAIKO grinding, backside wet etching, backside metallization, ring cutting and ring removal. In the TAIKO process, when grinding the wafer, the peripheral edge of the wafer (about 3mm) is retained, and only the inner circle is ground and thinned. The advantage of the TAIKO process is to reduce wafer war...

AI Technical Summary

Problems solved by technology

[0005] The current laser ring cutting process adopts a fixed time method for ring cutting process. This fixed time is based on the experience value accumulated in the previous process, and the cutting effect is roughly estimated by the cutting time. This time is difficult to adjust according to the actual situation. , there is a problem of insufficient or too long cutting time. Insufficient cutting time will lead to the connection between the support ring and the effective die area. During the ring removal process, cracks will be caused, and in severe cases, lobes will be generated; too long cutting time will cause, WPH (number of wafers per hour) is too low, and burns the UV film supporting the wafer, causing damage and defects on the appearance of the wafer

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